Mechanisms of Diffusion and Dissociation of E-Centers in Silicon

Abstract:

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In this paper we discuss possible mechanisms of PV annealing in Si. Our approach includes a combination of density functional theory and lattice kinetic Monte-Carlo (LKMC) simulations. The density functional theory is used to find the binding energies and jump barriers for P-V pair at different separations (from one to three interatomic bonds between complex constituents) and in different charge states. The mobility of the complex is simulated by LKMC with event probabilities calculated based on the energies from ab-initio calculations. .

Info:

Periodical:

Defect and Diffusion Forum (Volumes 237-240)

Edited by:

M. Danielewski, R. Filipek, R. Kozubski, W. Kucza, P. Zieba, Z. Zurek

Pages:

1129-1134

DOI:

10.4028/www.scientific.net/DDF.237-240.1129

Citation:

M. G. Ganchenkova et al., "Mechanisms of Diffusion and Dissociation of E-Centers in Silicon", Defect and Diffusion Forum, Vols. 237-240, pp. 1129-1134, 2005

Online since:

April 2005

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$35.00

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