Mechanisms of Diffusion and Dissociation of E-Centers in Silicon
In this paper we discuss possible mechanisms of PV annealing in Si. Our approach includes a combination of density functional theory and lattice kinetic Monte-Carlo (LKMC) simulations. The density functional theory is used to find the binding energies and jump barriers for P-V pair at different separations (from one to three interatomic bonds between complex constituents) and in different charge states. The mobility of the complex is simulated by LKMC with event probabilities calculated based on the energies from ab-initio calculations. .
M. Danielewski, R. Filipek, R. Kozubski, W. Kucza, P. Zieba, Z. Zurek
M. G. Ganchenkova et al., "Mechanisms of Diffusion and Dissociation of E-Centers in Silicon", Defect and Diffusion Forum, Vols. 237-240, pp. 1129-1134, 2005