Mechanisms of Diffusion and Dissociation of E-Centers in Silicon

Mariya G. Ganchenkova; V.A. Borodin; Risto M. Nieminen

doi:10.4028/www.scientific.net/DDF.237-240.1129

Paper Titles

Sedimentation of Substitutional Solute Atoms in Intermetallic Compound of Bi-Pb System under Ultra-Strong Gravitational Field
p.1101

Long-Term, Cyclic Oxidation Behaviour of Alumina- and Chromia-Forming Alloys
p.1107

Chemical and Physical Interactions of Si-Rich Steel Substrates during Hot Dipping Experiments in a Molten Al-(25 wt%)Si Alloy
p.1115

Nitrogen-Induced Formation of Nano-Structured Precipitations in the Ti-W-C-N System
p.1121

Mechanisms of Diffusion and Dissociation of E-Centers in Silicon
p.1129

MD Simulation Study of B1-B2 Phase Transition of KCl under High Pressure: Effects of Defects
p.1135

Auger Electron Spectroscopical Investigation of Interfacial Segregation in the Cu-Bi System
p.1141

Phase Transformations in ε-/γ'-Iron Nitride Compound Layers in the Temperature Range of 613 K - 693 K
p.1147

Characterization of TiAlSi Coating Deposited by Arc-PVD Method on TiAlCrNb Intermetallic Base Alloy
p.1153

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 237-240Mechanisms of Diffusion and Dissociation of...

Mechanisms of Diffusion and Dissociation of E-Centers in Silicon

Abstract:

In this paper we discuss possible mechanisms of PV annealing in Si. Our approach includes a combination of density functional theory and lattice kinetic Monte-Carlo (LKMC) simulations. The density functional theory is used to find the binding energies and jump barriers for P-V pair at different separations (from one to three interatomic bonds between complex constituents) and in different charge states. The mobility of the complex is simulated by LKMC with event probabilities calculated based on the energies from ab-initio calculations. .

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Periodical:

Defect and Diffusion Forum (Volumes 237-240)

Pages:

1129-1134

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.237-240.1129

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Online since:

April 2005

Authors:

Mariya G. Ganchenkova, V.A. Borodin, Risto M. Nieminen

Keywords:

Annealing, Density Function Theory (DFT), e-Centre, Monte-Carlo Simulation, Phosphorus, Silicon

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