Kinetic Monte Carlo (KMC) Simulation of GaAs (001) β₂ (2x4) Reconstructed Surface and Characterization

Abstract:

Several methods have been introduced to study and simulate homoepitaxial growth of III-V materials. GaAs (001) surface has widely been used in the last three decades due both to its importance as substrate and for characterization of epitaxial growth. In this paper, we firstly study the initial stage of homoepitaxial growth on a GaAs (001) β2(2x4) reconstructed surface using As2 . The simulation was carried out with Kinetic Monte Carlo simulations including the zinc blend structure β2 (2x4) reconstruction of GaAs surface. Then we discus results of the homoepitaxy GaAs on GaAs particularly morphological evolution of the two dimensional islands and observations were made in real-time at the growth temperature using reflection high energy electron diffraction (RHEED) and roughness morphology.

• Periodical: Defect and Diffusion Forum (Volumes 297-301)
• Pages: 308-317
• DOI: https://doi.org/10.4028/www.scientific.net/DDF.297-301.308
• Online since: April 2010
• Authors: Hamid Khachab, Yamani Abdelkafi, Abderrahmane Belghachi
• Keywords: Absorption, Desorption, Diffusion, GaAs, Growth, Kinetic Monte Carlo, MBE, Reconstruction, Reflection High Energy Electron Diffraction (RHEED), Roughness, β₂ (2x4),

References

[1] E.S. Tok, J.H. Neave, F.E. Allegretti, J. Zhang, T.S. Jones, B.A. Joyce: Surf. Sci. Vol. 371 (1997), p.277.

[2] W.G. Schmidt, S. Mirbt and F. Bechstedt: Phys. Rev. B. Vol. 62 (2000), p.8087.

[3] E.S. Penev, On the theory of surface diffusion in InAs/GaAs(001) heteroepitaxy, Thesis, University of Berlin (2002).

[4] B.A. Joyce and D.D. Vvedensky: Mat. Sci. Eng. Vol. 46 (2004), p.127.

[5] V.P. Labella, M.R. Krause, Z. Ding and P.M. Tchibado: Surf. Sci. Vol. 60 (2005), p.1.

[6] B.A. Joyce, D.D. Vvedensky, G.R. Bell , J.G. Belk, M. Itoh and T.S. Jones: Mat. Sci. Eng. B Vol. 67 (1999), p.7.

[7] V.P. Labella, H. Yang, D.W. Bullock, P.M. Tchibado: Phys. Rev. Lett. Vol. 83 (1999), p.2989.

[8] M. Itoh: Progress in Surface Science Vol. 66 (2001), p.53.

[9] D.D. Vvedensky, M. Itoh, G.R. Bell, T.S. Jones and B.A. Joyce: J. Crystal Growth Vols. 201/202 (1999), p.56.

[10] B.A. Joyce, D.D. Vvedensky, A.R. Avery, J.G. Belk, H.T. Dobbs and T.S. Jones: Appl. Surf. Sci. Vol. 130 (1998), p.357.

[11] M. Itoh, G.R. Bell, B.A. Joyce, D.D. Vvedensky: Surf. Sci. Vol. 464 (2000), p.200.

[12] P. Kratzer, E. Penev, M. Scheffler: Appl. Phys. A Vol. 75 (2002), p.79.

[13] P. Kratzer, C.G. Morgan and M. Scheffler: Phys. Rev. B Vol. 59 (1999), p.15246.

[14] P. Kratzer, E. Penev and M. Scheffler: Appl. Phys. A Vol. 75 (2002), p.79.

[15] P. Kratzer, E. Penev and M. Scheffler: Appl. Phys. A Vol. 75 (2002), p.79.

[16] A.C. Levi and M. Kotrla: J. Phys. Condens. Matter Vol. 9 (1997), p.299.

[17] D.P. Landau and K. Binder; A guide to Monte Carlo simulation in statistical physics, Cambridge University Press, Cambridge (2000).

[18] D.D. Vvedensky, S. Clarcke: Surf. Sci. Vol. 225 (1990), p.373.

[19] B.A. Joyce, J. Zhang, T. Sitara and J.H. Neave: J. Crystal Growth Vol. 115 (1991), p.338.

[20] M.A. Salmi, M. Alatalo, T. Ala-Nissila and R.M. Nieminen: Surf. Sci. Vol. 425 (1999), p.31.

[21] Y. Abdelkafi, « Modélisation et simulation de l'épitaxie par jets moléculaires », Mémoire de magister, Université de Béchar, Algérie (2009).

[22] N. Fazouan, « Simulation de suivi in situ par photoémission de la dynamique de croissance épitaxiale de semiconducteurs III-V », thèse de doctorat d'état, Université Ibn Tofail, Maroc (2001).