Paper Titles

A Review of some Theoretical Models for Point Defect Calculations
p.81

The Diffusion Problem of New Phase Inclusion Growth in Bounded Regions of Oversaturated Solid Solution
p.99

Pressureless Sintering and Characterization of Al₂O₃-SiO₂-ZrO₂ Composite
p.113

Electrical Properties of Zr-Doped La₂O₃ Nanocrystallites as a Good Gate Dielectric
p.129

Effect of Post-Deposition Annealing on some Optical Properties of Thermally-Evaporated V₂O₅ Thin Film
p.139

Electrical Conductivity and Phase Transition Studies in the ZrO₂-CdO System
p.147

Growth of ZnO Thin Films on Silicon Substrates by Atomic Layer Deposition
p.159

Observation of Dielectric Peaks in Glassy Se₇₀Te₂₀Sn₁₀ Alloy
p.165

Theoretical Investigation of the Spin Hamiltonian Parameters for the Tetragonal [Fe(CN)₄Cl₂]^5– Complex in NaCI
p.177

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 329Growth of ZnO Thin Films on Silicon Substrates by...

Growth of ZnO Thin Films on Silicon Substrates by Atomic Layer Deposition

Article Preview

Abstract:

Atomic Layer Deposition (ALD) Offers the Key Benefits of Precise Deposition of Nanostructured Thin Films with Excellent Conformal Coverage. ALD Is Being Used in the Semiconductor Industry for Producing High-k (high Permittivity) Gate Oxides and High-K Memory Capacitor Dielectrics. Zno Has Attractive Properties for Various Applications such as Semiconductors, Gas Sensors and Solar Cells. in this Study, ZnO Thin Films Were Deposited via ALD Using Alternating Exposures of Diethyl Zinc (DEZ) and Deionized Water (H₂O) on Silicon Wafer (100). the Thin Films Were Analyzed Using X-Ray Diffraction (XRD), Ellipsometer and Atomic Force Microscope (AFM). the XRD Analysis Shows the Presence of ZnO Thin Films with a Hexagonal Wurtzite Structure. the Thickness of ZnO Thin Films Was Correlated with the Substrate Temperatures and Deposition Cycles. the Coating Thickness Was Found to Increase with the Increase of the Deposition Cycles, but it Decreased with the Increase of Deposition Temperature. the Nucleation and Growth Mechanism of Zno Thin Film Has Been Established. it Can Be Concluded that, the Growth Mechanism of Zno Films Is Strongly Dependent on the ALD Processing Conditions.

You might also be interested in these eBooks

Dislocation Reactions and Stacking-Fault Energies

Info:

Periodical:

Defect and Diffusion Forum (Volume 329)

Pages:

159-164

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.329.159

Citation:

Cite this paper

Online since:

July 2012

Authors:

Rosniza Hussin, Xiang Hui Hou, Kwang Leong Choy

Keywords:

Atomic Layer Deposition (ALD), Thin Film, Zinc Oxide (ZnO)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2012 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] D.M. King, X.H. Du, A.S. Cavanagh, A. Weimer: Nanotechnology, 19 (2008) 445401.

[2] M. Schumacher, P.K. Baumann, T. Seidel: Chemical Vapor Deposition, 12 (2006) 99.

[3] E. Przezdziecka, L. Wachnicki, W. Paszkowicz, E. Lusakowska, T. Krajewski, G. Luka, E. Guziewicz, M. Godlewski: Semiconductor Science and Technology, 24 (2009) 1.

[4] A.W. Ott, R.P.H. Chang: Materials Chemistry and Physics, 58 (1999) 132.

[5] E. Przezdziecka, T. Krajewski, L. Wachnicki, A. Szczepanik, A. Wojcik-Glodowska, S. Yatsunenko, E. Lusakowska, W. Paszkowicz, E. Guziewicz, M. Godlewski: Acta Physica Polonica A, 114 (2008) 1303.

DOI: 10.12693/aphyspola.114.1303

[6] S. Kwon, S. Bang, S. Lee, S. Jeon, W. Jeong, H. Kim, S. C. Gong, H. J. Chang, H.H. Park, and H. Jeon: Semiconductor Science and Technology, 24 (2009) 035015.

DOI: 10.1088/0268-1242/24/3/035015

[7] A. Yamada, B. S. Sang, M. Konagai: Applied Surface Science, 112 (1997) 216.

[8] S.H.K. Park, Y.E. Lee: Journal of Materials Science, 39 (2004) 2195.

[9] B. Sangsang, A. Yamada, and M. Konagai: Japanese Journal of Applied Physics, 2 (1998) L1125.

[10] A. Pourret, P. Guyot-Sionnest, J.W. Elam: Advanced Materials, 21 (2009) 232.

[11] S. Lee, Y.H. Im and Y. -B. Hahn: Korean Journal of Chemical Engineering, 22 (2005) 334.

[12] L. Dong, Q. -Q. Sun, Y. Shi, H. -W. Guo, H. Liu, C. Wang, S. -J. Ding, D. W. Zhang: Thin Solid Films, 517 (2009) 4355.

[13] C. Klingshirn: Chem. Phys. Chem., 8 (2007) 782.

[14] J. Lim, C. Lee: Thin Solid Films, 515 (2007) 3335.

[15] R.L. Puurunen: Preparation by Atomic Layer Deposition and Charcterisation of Catalyst support surface with Aluminium Nitrate, in: Industrial Chemistry vol PhD, Helsinki University of Technology, Espoo Finland, (2002).

[16] S.Y. Pung, K.L. Choy, X. Hou, C.X. Shan: Nanotechnology, 19 (2008) 435609.

[17] G.L. Doll, B.A. Mensah, H. Mohseni, T.W. Scharf: Journal of Thermal Spray Technology, 19 (2010) 510.

[18] C.X. Shan, J.Y. Zhang, B. Yao, D.Z. Shen, X.W. Fan, K.L. Choy: Journal of Vacuum Science and Technology B, 27 (2009) 1765.

[19] Y. Arai: Chemistry of Powder Production, Chapman & Hall, 1996, p.225.

[20] N.M. Rahaman: Ceramic Processing and Sintering, Marcel Dekker, Inc, New York, (1995).

[21] I.A. Kowalik, E. Guziewicz, K. Kopalko, S. Yatsunenko, A. Wójcik-Glodowska, M. Godlewski, P. Dluzewski, E. Lusakowska, W. Paszkowicz: Journal of Crystal Growth, 311 (2009) 1096.

DOI: 10.1016/j.jcrysgro.2008.11.086

[22] M.A. Rueter, J.M. Vohs: Surface Science, 262 (1992) 42.

[23] R.L. Puurunen: Journal of Applied Physics, 97 (2005) 121301.

[24] R. F. Bunshah: Handbook of Deposition Technologies for Films and Coatings - Science, Technology and Applications, William Andrew (1994).