Electrical Properties of Zr-Doped La₂O₃ Nanocrystallites as a Good Gate Dielectric

Abstract:

Issues such as Tunneling, Leakage Currents and Light-Atom Penetration through the Film Are Threatening the Viability of Ultra-Thin Sio₂ as a Good Dielectric for Industrial and Electronic Devices and in Ceramic Technologies. in this Paper, the Effect of Zirconium-Doped Lanthanum Oxide Is Investigated in the Hope that this Material Can Be Used as a Good Gate Dielectric for the next Generation of CMOS (Complementary-Metal-Oxide-Semiconductor). Zirconium Lanthanum Oxide Nanocrystallites with General Formula of Zr_xla_1-xO_y Were Prepared by Using the Sol-Gel Method, such that the Zr Atomic Fractions in the Material Were in the Range of X = 5%, 20% and 50%. the Nanocrystallite’s Phases and Properties Were Characterized Using X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) Techniques. Electrical Property Characterization Was Also Performed Using the Cyclic-Voltameter (C-V) Technique in TRIS Solution (pH = 7.3). C-V Measurements Show that Current through the TRIS Reduces at Higher Temperatures. Moreover, Elemental Qualitative Analysis Was Performed via Energy Dispersive X-Ray (EDX) Spectroscopy and Confirmed the above Claims.

• Periodical: Defect and Diffusion Forum (Volume 329)
• Pages: 129-138
• DOI: https://doi.org/10.4028/www.scientific.net/DDF.329.129
• Online since: July 2012
• Authors: Ali Bahari, R. Gholipur, Z. Khorshidi
• Keywords: High-K Dielectric, Nano-Transistor, Sol-Gel (SG), Zirconium-Doped Lanthanum Oxide

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