Evolution of Optical Spectra at the Initial Stages of Fe Growth on Si (001)

Abstract:

Optical reflection spectra in the photon energy range of 1.5-6 eV have been studied after the growth of ultrathin iron films on silicon (001) in the 0-1.2 nm thickness range. It has been noted that the reflection coefficient values vary nonmonotonically in thickness near the limiting energy of 1.5 eV and 6 eV. Moreover, they are abnormally large one at 1.5 eV and small one at 6 eV. It is shown that these phenomena can not be explained by simple models of the formation of a metallic, silicide film or amorphous silicon layer at the interface and correspond to structural-phase transformations in the film and in the substrate interface region.

• Periodical: Defect and Diffusion Forum (Volume 386)
• Pages: 15-20
• DOI: https://doi.org/10.4028/www.scientific.net/DDF.386.15
• Online since: September 2018
• Authors: Andrei Mikhailovich Maslov*, Nikolay I. Plusnin
• Keywords: Fe, Growth, Interface Reconstruction, Optical Reflection Spectra, Si (001), Wetting Layer

References

[1] L. J. Brillson, The structure and properties of metal-semiconductor interfaces. Surface Science Reports, 2 (1982) 123-326.

DOI: 10.1016/0167-5729(82)90001-2

[2] G. Rossi, d and f metal interface formation on silicon. Surface Science Reports, 7 (1987) 1-101.

[3] G. Margaritondo, A. Franciosi, Synchrotron radiation photoemission spectroscopy of semiconductor surfaces and interfaces. Annual Review of Materials Science, 14 (1984) 67-93.

DOI: 10.1146/annurev.ms.14.080184.000435

[4] R. M. Walser, R. W. Bene, First phase nucleation in silicon–transition‐metal planar interfaces. Applied Physics Letters, 28 (1976) 624-625.

DOI: 10.1063/1.88590

[5] V.A. Uskov, E.A. Erofeeva, N.A. Lineva, Low-temperature diffusion of impurities in silicon. In: Doping of Semiconductors (Russia). Science - Moscow (1982) pp.110-114.

[6] N. I. Plusnin, The use of AES and EELS for complex analysis of two-dimensional coatings and their growth process. Modern Electronic Materials, 3 (2017) 131-141.

DOI: 10.1016/j.moem.2017.12.001

[7] V. Domnich, Y. Gogotsi, Phase transformations in silicon under contact loading. Reviews on Advanced Materials Science (Russia), 3 (2002) 1-36.

[8] M. A. Green, Self-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients. Solar Energy Materials and Solar Cells, 92 (2008) 1305-1310.

DOI: 10.1016/j.solmat.2008.06.009

[9] R. A. Street, Hydrogenated amorphous silicon, Cambridge Solid State Science Series, Eds. R.W. Cahn, E.A. Davis and I.M. Ward. Cambridge University Press, (1991).

[10] N. I. Plusnin,, V. M. Il'iashchenko, S. V. Krylov, Metal thin-film nanophases and their interface with silicon. In Journal of Physics: Conference Series, 100 (2008) 052094 (4).

DOI: 10.1088/1742-6596/100/5/052094

[11] N. I. Plusnin, Metallic nanofilms on single crystal silicon: Growth, properties and applications. Modern Electronic Materials, 3 (2017) 57-65.

DOI: 10.1016/j.moem.2017.09.005

[12] D. L. Windt, IMD—Software for modeling the optical properties of multilayer films. Computers in physics, 12 (1998) 360-370.

DOI: 10.1063/1.168689

[13] I. A. Tarasov, Z. I. Popov, S. N. Varnakov, M. S. Molokeev, A. S. Fedorov, I. A. Yakovlev, S. G. E. Ovchinnikov, Optical characteristics of an epitaxial Fe3Si/Si (111) iron silicide film. JETP letters, 99 (2014) 565-569.

DOI: 10.1134/s0021364014100105