Growth of Sb-Doped β-FeSi2 Epitaxial Films and Optimization of Donor Activation Conditions

Hajime Eguchi; Motoki Iinuma; Hirofumi Hoshida; Naoki Murakoso; Yoshikazu Terai

doi:10.4028/www.scientific.net/DDF.386.38

Paper Titles

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Growth of Ru₂Si₃ Polycrystalline Thin Films by Solid Phase Epitaxy in Ru-Si Amorphous Layers
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Identification of Vibrational Modes in BaSi₂ Epitaxial Films by Infrared and Raman Spectroscopy
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 386Growth of Sb-Doped β-FeSi2 Epitaxial Films and...

Growth of Sb-Doped β-FeSi₂ Epitaxial Films and Optimization of Donor Activation Conditions

Abstract:

Sb-doped β-FeSi₂ epitaxial films on Si(111) were grown by molecular beam epitaxy to control an electron density of β-FeSi₂. After an optimization of donor activation conditions in the Sb-doped β-FeSi₂, the electron density of 6 × 10¹⁸ cm^-3 at 300 K was achieved by thermal annealing in a N₂ ambient. In the temperature dependence of carrier density, the n-type conduction was changed to p-type conduction at low temperatures in the film annealed at high temperature (600 °C). Raman spectra of the annealed films showed that both Fe and Si sites were substituted by the doped Sb in β-FeSi₂ lattice.

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Periodical:

Defect and Diffusion Forum (Volume 386)

Pages:

38-42

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.386.38

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Online since:

September 2018

Authors:

Hajime Eguchi, Motoki Iinuma, Hirofumi Hoshida, Naoki Murakoso, Yoshikazu Terai*

Keywords:

Carrier Control, Semiconducting Silicide, β-FeSi₂

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