Surface Orientation Influence on the Langmuir Evaporation Characteristics of GaAs Substrates

Abstract:

The dependences of congruent evaporation temperature T_c and the desorption activation energies of GaAs components on the substrate surface orientation are analyzed using Monte Carlo simulation. On the vicinal surfaces with the (111)A orientation at temperatures exceeding T_c, the metal droplets start to grow at step edges, and, with the (111)B orientation, the droplets nucleate randomly on the terraces. The droplet concentration on the (111)B surface is higher than that on the (111)A surface. The droplet-crystal interface roughness is different for (111)A and (111)B orientations. The T_c of (111)B surfaces is lower than that of (111)A surfaces. For both surface orientations, T_c decreases when the vicinal surface terrace width is shorter than the double gallium diffusion length. The gallium and arsenic desorption activation energies dependence on the vicinal surface misorientation is demonstrated. A sharp increase in the arsenic desorption rate is observed with an increase of the (111)A surface coating with liquid gallium.

• Periodical: Defect and Diffusion Forum (Volume 386)
• Pages: 21-26
• DOI: https://doi.org/10.4028/www.scientific.net/DDF.386.21
• Online since: September 2018
• Authors: Anna A. Spirina, Alla G. Nastovjak, Nataly Shwartz*
• Keywords: GaAs, Langmuir Evaporation, Monte Carlo, Simulation

References

[1] A.V. Latyshev, A.L. Aseev, A.B. Krasilnikov, S.I. Stenin, Transformations on Clean Si(111) stepped surface during sublimation, Surf. Sci. 213 (1989) 157-169.

DOI: 10.1016/0039-6028(89)90256-2

[2] K. Reyes, P. Smereka, D. Nothern, J.M. Millunchick, S. Bietti, C. Somaschini, S. Sanguinetti, C. Frigeri, A unified model of droplet epitaxy for compound semiconductor nanostructures: experiments and theory, Phys. Rev. B. 87 (2013) 165406.

DOI: 10.1103/physrevb.87.165406

[3] C. Colombo, D. Spirkoska, M. Frimmer, G. Abstreiter, A.Morral, Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy, Phys. Rev. B 77 (2008) 155326.

DOI: 10.1103/physrevb.77.155326

[4] Z.M. Wang, B.L. Liang, K.A. Sablon, G.J. Salamo, Nanoholes fabricated by self-assembled gallium nanodrill on GaAs(100), Appl. Phys. Lett. 90 (2007) 113120.

DOI: 10.1063/1.2713745

[5] S. Li, J. Wu, Z. Wang, Z. Li, Y. Su, Z. Wu, Y. Jiang, G.J. Salamo, Thermal etching process of microscale pits on the GaAs(001) surface, Phys. Status Solidi RRL 6 (2012) 25-27.

DOI: 10.1002/pssr.201105482

[6] C. Zhao, J. Li, Y. Yu, H. Ni, Z. Niu, X. Zhang, Observation of the in-plane spin-dephasing anisotropy in [111]-grown GaAs/AlGaAs quantum well, Appl. Phys. Lett. 104 (2014) 052411.

DOI: 10.1063/1.4864183

[7] E. Stock, T. Warming, I. Ostapenko, S. Rodt, A. Schliwa, J.A. Töfflinger, A. Lochmann, A.I. Toropov, S.A. Moshchenko, D.V. Dmitriev, V.A. Haisler, D. Bimberg, Single-photon emission from InGaAs quantum dots grown on (111) GaAs, Appl. Phys. Lett 96 (2010) 093112.

DOI: 10.1063/1.3337097

[8] M. Jo, T. Mano, M. Abbarchi, T. Kuroda, Y. Sakuma, K. Sakoda, Self-Limiting Growth of Hexagonal and Tri-angular Quantum Dots on (111)A, Cryst. Growth & Des. 12 (2012) 1411-1415.

DOI: 10.1021/cg201513m

[9] M.S. Abrahams, C.J. Buiocchi, Etching of Dislocations on the Low-Index Faces of GaAs, J. Appl. Phys. 36 (1965) 2855-2863.

DOI: 10.1063/1.1714594

[10] T. Takebe, M. Fujii, T. Yamamoto, K. Fujita, T. Watanabe, Orientation – dependent Ga surface diffusion in molecular beam epitaxy of GaAs on GaAs patterned substrates, J. Appl. Phys. 81 (1997) 7273-7281.

DOI: 10.1063/1.365548

[11] C. Lou, G. Somorjai, Studies of the vaporization mechanism of gallium arsenide single crystals, J. Chem. Phys. 55 (1971) 4554-4565.

DOI: 10.1063/1.1676789

[12] B. Goldshtein, D. Stozak, V. Ban, Langmuir evaporation from the (100), (111A) and (111B) faces of GaAs, Surf. Sci. 57 (1976) 733-740.

DOI: 10.1016/0039-6028(76)90358-7

[13] S. Kanjanachuchai, C. Euaruksakul, Self-running Ga droplets on GaAs (111)A and (111)B surfaces, ACS Appl. Mater. Interfaces 5 (2013) 7709-7713.

DOI: 10.1021/am402455u

[14] J.R. Arthur, Vapor pressures and phase equilibria in the Ga-As system, J. Phys. Chem. Solids 28 (1967) 2257-2267.

DOI: 10.1016/0022-3697(67)90251-x

[15] J. Jian-yun Shen, C. Chatillon, Thermodynamic calculations of congruent vaporization in III–V systems; Applications to the In-As, Ga-As and Ga-In-As systems, J. Crystal Growth 106 (1990) 543-552.

DOI: 10.1016/0022-0248(90)90028-j

[16] C. Chatillon, D. Chatain, Congruent vaporization of GaAs(s) and stability of Ga(l) droplets at the GaAs(s) surface, J. Cryst. Growth 151 (1995) 91-101.

DOI: 10.1016/0022-0248(95)00044-5

[17] A. Zverev, C. Zinchenko, N. Shwartz, Z. Yanovitskaja, A Monte Carlo simulation of the processes of nanostructures growth: The time-scale event-scheduling algorithm, Nanotech. in Russia 4 (2009) 215-224.

DOI: 10.1134/s1995078009030094

[18] N. Shwartz, M. Vasilenko, A. Nastovjak, I. Neizvestny, Concentric GaAs nanorings formation by droplet epitaxy – Monte Carlo simulation, Comput. Mat. Sci. 141 (2018) 91-100.

DOI: 10.1016/j.commatsci.2017.09.020

[19] M. Vasilenko, I. Neizvestny, N. Shwartz, Formation of GaAs nanostructures by droplet epitaxy – Monte Carlo simulation, Comput. Mat. Sci. 102 (2015) 286-292.

DOI: 10.1016/j.commatsci.2015.02.032

[20] A.A. Spirina, A.G. Nastovjak, N.L. Shwartz, Influence of GaAs substrates properties on the congruent evaporation temperature, J. of Phys.: Conf. Ser. 993 (2018) 012011.

DOI: 10.1088/1742-6596/993/1/012011

[21] J. Tersoff, D.E. Jesson, W.X. Tang, Decomposition Controlled by Surface Morphology during Langmuir Evaporation of GaAs, Phys. Rev. Lett. 105 (2010) 035702.

DOI: 10.1103/physrevlett.105.035702

[22] Yu.P. Khukhryanskii, L.N. Veremjanina, I.V. Nikishina, O.I. Sisoev, Kinetics of Langmuir evaporation of indium phosphide and arsenide components, J. Phys. Chem. 71 (1997) 870-874 (in rus.).