Growth of Ru2Si3 Polycrystalline Thin Films by Solid Phase Epitaxy in Ru-Si Amorphous Layers

Kenta Setojima; Syuya Ikeda; Kazuya Ogi; Yoshikazu Terai

doi:10.4028/www.scientific.net/DDF.386.33

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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 386Growth of Ru2Si3 Polycrystalline Thin Films by...

Growth of Ru₂Si₃ Polycrystalline Thin Films by Solid Phase Epitaxy in Ru-Si Amorphous Layers

Abstract:

Semiconducting ruthenium silicide (Ru₂Si₃) polycrystalline thin films were grown by solid phase epitaxy using Ru-Si amorphous layers on Si substrates. The formation of Ru₂Si₃ phase was confirmed by XRD and Raman measurements when the amorphous layers were annealed at 600−900 °C in a vacuum. The Ru₂Si₃ thin films showed a low electron density of 1 × 10¹⁶ cm^-3 with a high mobility of 430−940 cm²V^-1s^-1. Photoluminescence (PL) at ~0.8 eV was observed in the Ru₂Si₃ films.

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Periodical:

Defect and Diffusion Forum (Volume 386)

Pages:

33-37

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.386.33

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Online since:

September 2018

Authors:

Kenta Setojima, Syuya Ikeda, Kazuya Ogi, Yoshikazu Terai*

Keywords:

Ru₂Si₃, Semiconducting Silicide, Solid Phase Epitaxy

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