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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 410Features of Melt Droplet Formation during...

Features of Melt Droplet Formation during Electrical Destruction Aluminum Films on the Semiconductor Surface

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Abstract:

The work is devoted to processes during melting of thin aluminium film on silicon surface in pulse current mode. An experiment was conducted to study the dynamics during the onset of the liquid phase on a metal film. Besides, the process of formation droplet localization zones is considered. The experimental part revealed critical current values during an electrical explosion of thin metal films near the thermal shock source. Using the oscillographic method, the temperature profile of the metallization track is calculated.

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Materials Engineering and Technologies for Production and Processing VII

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Periodical:

Defect and Diffusion Forum (Volume 410)

Pages:

737-741

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.410.737

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Online since:

August 2021

Authors:

Marina V. Koryachko*, Danila E. Pshonkin, Arkady A. Skvortsov

Keywords:

Aluminum, Current Pulse, Metallization System, Semiconductor Surface, Thermal Shock

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© 2021 Trans Tech Publications Ltd. All Rights Reserved

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