Effective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-Ray Topographs of 4H-SiC Wafers

Qian Yu Cheng; Hong Yu Peng; Ze Yu Chen; Shanshan Hu; Yafei Liu; Balaji Raghothamachar; Michael Dudley

doi:10.4028/p-h6l351

Paper Titles

Stacking Faults Originating from Star-Defects in 4H-SiC
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P-Type Impurities in 4H-SiC Calculated Using Density Functional Theory
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The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center
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Analysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-Ray Topography
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Effective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-Ray Topographs of 4H-SiC Wafers
p.57

Evaluation of Strain in 3C-SiC/Si Epiwafers from X-Ray Diffraction Measurements
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Analysis of Basal Plane Dislocation Motion Induced by p+ Ion Implantation Using Synchrotron X-Ray Topography
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A Study on Coldflame Propagation Characteristics Applying Amplified Ignition Source to Overcome Landfill gas’s Flame Retardant Limit
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Thermal Effect of Bobbin Tool Friction Stir Welding on the Mechanical Behavior of High Density Polyethylene Sheets: Experimental Study
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 426Effective Penetration Depth Investigation for...

Effective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-Ray Topographs of 4H-SiC Wafers

Abstract:

In 4H-SiC crystals, Frank type dislocations are created through the deflection of threading screw/mixed dislocations onto the basal plane. Grazing-incidence X-ray topographs are often used to evaluate the density of such dislocations and a knowledge of the effective penetration depth is therefore essential. In this study, a systematic analysis is performed to investigate the effective penetration depth, which is the depth from which contrast from the dislocation is still discernible. This is achieved by comparison between observed topographic images and detailed ray tracing simulations. Simulations shows no significant contrast difference between a deflected TSD and a deflected TMD with the same line direction since the large c component is the dominant contributor to the effective misorientation, whereas the effect of a component is rather negligible. Therefore, this effective penetration depth study uses ray tracing simulation images of deflected TSDs with photoelectric absorption applied to compare with all topographically observed Frank type dislocations. Analysis first reveals that the effective penetration depth varies with the line direction of a Frank type dislocation, and the effective penetration depth is significantly deeper compared to that of a BPD. Further, the effective penetration depth on ray tracing simulations with absorption applied matches well with experimentally measured depth. The study also evaluated the effectiveness of a simplified model based on an approximate expression for the effective misorientation of a dislocation modulated by photoelectric absorption. This was also found to yield satisfactory results and can be used as a universal method to determine the effective penetration depth for Frank type dislocations with c component of Burgers vector.

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Periodical:

Defect and Diffusion Forum (Volume 426)

Pages:

57-64

DOI:

https://doi.org/10.4028/p-h6l351

Citation:

Cite this paper

Online since:

June 2023

Authors:

Qian Yu Cheng*, Hong Yu Peng, Ze Yu Chen, Shanshan Hu, Yafei Liu, Balaji Raghothamachar, Michael Dudley

Keywords:

4H-SiC, Deflected TSD/TMD, Frank Type Dislocation, Penetration Depth, Ray-Tracing Simulation, X-Ray Topography

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

[1] H. Das, S. Sunkari, J. Justice, H. Pham, K.S. Park, Effect of defects in silicon carbide epitaxial layers on yield and reliability, Mater. Sci. Forum 963 (2019) 284-287.