Analysis of Basal Plane Dislocation Motion Induced by p+ Ion Implantation Using Synchrotron X-Ray Topography

Ze Yu Chen; Yafei Liu; Hong Yu Peng; Qian Yu Cheng; Shanshan Hu; Balaji Raghothamachar; Michael Dudley; Stephen A. Mancini; Seung Yup Jang; Woong Je Sung

doi:10.4028/p-4mo61y

Paper Titles

The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center
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Analysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-Ray Topography
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Effective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-Ray Topographs of 4H-SiC Wafers
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Evaluation of Strain in 3C-SiC/Si Epiwafers from X-Ray Diffraction Measurements
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Analysis of Basal Plane Dislocation Motion Induced by p+ Ion Implantation Using Synchrotron X-Ray Topography
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A Study on Coldflame Propagation Characteristics Applying Amplified Ignition Source to Overcome Landfill gas’s Flame Retardant Limit
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Thermal Effect of Bobbin Tool Friction Stir Welding on the Mechanical Behavior of High Density Polyethylene Sheets: Experimental Study
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Hydrodynamic Stability Analysis for MHD Casson Fluid Flow through a Restricted Channel
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Optimization of Aircraft Fuel Dump Rate towards the Mitigation of Post-Impact Fire
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 426Analysis of Basal Plane Dislocation Motion Induced...

Analysis of Basal Plane Dislocation Motion Induced by p+ Ion Implantation Using Synchrotron X-Ray Topography

Abstract:

Multiple PIN diodes with junction termination extension (JTE) were fabricated on 4H-SiC wafers with 10 μm thick epilayers by ion implantation with various dosages of Al ions at room temperature (RT) and high temperature (600 °C). The subsequent annealing process was conducted at 1650 °C for 10 minutes to activate the dopant atoms and recover the lattice damages introduced by the implantation. Synchrotron X-ray topography was used to characterize the defects in the devices, and it is observed that basal plane dislocations (BPDs) were generated during the annealing process from the boundaries between the high (P+) and low (P-) doping concentration in devices implanted with relatively high doses at RT. Further, topographs also manifest motion of BPDs due to implantation-induced stresses, where BPDs with opposite sign Burgers vectors move in directions accommodative of nature of stress (tensile/compressive). On the other hand, generation of BPDs due to implantation was not observed in devices implanted either at relatively low dosages at both temperatures or relatively high dosages at high temperature. Measurements of blocking behaviors of devices illustrate that devices with higher densities of process-induced BPDs yield higher leakage currents.

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