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HomeJournal of Nano ResearchJournal of Nano Research Vol. 41Comparative Performance Analysis of Multi Gate...

Comparative Performance Analysis of Multi Gate Tunnel Field Effect Transistors

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Abstract:

In this paper, analytical modelling and performance analysis of novel device structures such as single gate SOI Tunnel Field Effect transistor (SG SOI TFET), Dual-Material Gate TFET (DMG TFET) and Dual Material Double Gate TFET (DMDG TFET) are proposed. The performance of the three devices is studied and compared in terms of surface potential, electric field and drain current. The DMDG TFET shows better performance in suppressing leakage current and enhancing I_ON current than the SG SOI TFET and DMG TFET. The analytical models of the devices are found to be in good agreement with the results obtained using two-dimensional TCAD device simulator.

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Journal of Nano Research Vol. 41

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Periodical:

Journal of Nano Research (Volume 41)

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1-8

DOI:

https://doi.org/10.4028/www.scientific.net/JNanoR.41.1

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Online since:

May 2016

Authors:

T.S. Arun Samuel, Karthigai Pandian M*

Keywords:

Analytical Modeling, Electric Field, Poisson Equation, Surface Potential, Tunnel Field Effect Transistor (TFET)

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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