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HomeJournal of Nano ResearchJournal of Nano Research Vol. 54Analytical Modelling and Simulation of Triple...

Analytical Modelling and Simulation of Triple Material Quadruple Gate Tunnel Field Effect Transistors

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Abstract:

We build up the electrostatic model for Triple Material Quadruple Gate (TMQG) Tunnel Field Effect Transistor of rectangular cross area, in view of semi 3D strategy in this paper. The Parabolic approximation method is utilized to tackle the 2-D Poisson condition with appropriate device boundary conditions and logical articulations for surface potential and electric fields are determined. The electric field dispersion is additionally used to ascertain the tunneling generation rate. The created show furnishes the plan rules of TMQG with enhanced I_ON current. The diagnostic outcomes are contrasted and TCAD recreation comes about.

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Journal of Nano Research Vol. 54

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Periodical:

Journal of Nano Research (Volume 54)

Pages:

146-157

DOI:

https://doi.org/10.4028/www.scientific.net/JNanoR.54.146

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Online since:

August 2018

Authors:

T.S. Arun Samuel*, S. Komalavalli

Keywords:

Electric Fields, Poisson Equation, Surface Potential, Triple Material Quadruple Gate (TMQG), Tunnel Field Effect Transistor (TFET)

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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