High-Transconductance and Low-Leakage Current Single Aluminum Nitride Nanowire Field Effect Transistor

Abstract:

This study presents electrical transport properties of a catalyst-free grown single aluminum nitride nanowire field effect transistor (AlNNW-FET) exhibiting a very high transconductance of 26.9 pS, high on/off current ratio of 795.9, high conductivity of 9.8 x 10^-4 Ω^-1.cm^-1, and a very low leakage current of 10 pA. The conductivity of AlN nanowire is two orders of magnitude higher than the reported studies. The AlNNW-FET reveals a dominant p-type conductivity. The p-type conductivity can be attributed to aluminum vacancies and complexes composed of Al vacancies and oxygen impurities. In consequence, the fabricated AlNNW-FET with high-performance, cost-effectiveness, and high-power efficiency is very well suited for use in low power and high temperature nanoelectronic and piezoelectric sensor applications, as well as integrated electro-optical devices including optomechanical devices and pyroelectric photodetectors.

• Periodical: Journal of Nano Research (Volume 81)
• Pages: 1-8
• DOI: https://doi.org/10.4028/p-kxPR2q
• Online since: December 2023
• Authors: Kasif Teker*
• Keywords: AlN Nanowires, High Temperature Electronics, Nanoelectronics, Transport Properties

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