CSVT as a Technique to Obtain Nanostructured Materials: WO3-x

Abstract:

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The growth of tungsten oxide nanowires on silicon substrates without using any catalyst is demonstrated by means of close-spaced vapor transport (CSVT) technique at atmospheric pressure. The source was formerly prepared from a tungsten foil to produce a tungsten oxide film. CSVT array is completed with silicon substrates located at a distance of ~350 m over the tungsten oxide source at moderate temperatures (~750°C). Two distinct kinds of nanostructures were produced; a uniform distribution of free standing tungsten oxide wires of several micrometers in length with diameters less than 150 nm; and wires assembled to form nanowire bundle. The X-ray diffraction characterizations show that the phases of WO2.7 and WO2.9 are present.

Info:

Periodical:

Edited by:

Velumani S., R. Asomoza and Umapada Pal

Pages:

31-37

DOI:

10.4028/www.scientific.net/JNanoR.9.31

Citation:

O. Goiz et al., "CSVT as a Technique to Obtain Nanostructured Materials: WO3-x", Journal of Nano Research, Vol. 9, pp. 31-37, 2010

Online since:

February 2010

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$35.00

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