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HomeJournal of Nano ResearchJournal of Nano Research Vol. 9CSVT as a Technique to Obtain Nanostructured...

CSVT as a Technique to Obtain Nanostructured Materials: WO_3-x

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Abstract:

The growth of tungsten oxide nanowires on silicon substrates without using any catalyst is demonstrated by means of close-spaced vapor transport (CSVT) technique at atmospheric pressure. The source was formerly prepared from a tungsten foil to produce a tungsten oxide film. CSVT array is completed with silicon substrates located at a distance of ~350 m over the tungsten oxide source at moderate temperatures (~750°C). Two distinct kinds of nanostructures were produced; a uniform distribution of free standing tungsten oxide wires of several micrometers in length with diameters less than 150 nm; and wires assembled to form nanowire bundle. The X-ray diffraction characterizations show that the phases of WO2.7 and WO2.9 are present.

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Journal of Nano Research Vol. 9

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Periodical:

Journal of Nano Research (Volume 9)

Pages:

31-37

DOI:

https://doi.org/10.4028/www.scientific.net/JNanoR.9.31

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Online since:

February 2010

Authors:

O. Goiz, F. Chávez, C. Felipe, R. Peña-Sierra, N. Morales

Keywords:

CSVT, Nanowire, Tungsten Oxide

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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