Influence of Hydrogen Gas Dilution on the Properties of Silicon-Doped Thin Films Prepared by the Hot-Wire Plasma-Assisted Technique

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Periodical:

Key Engineering Materials (Volumes 230-232)

Edited by:

Teresa Vieira

Pages:

591-594

DOI:

10.4028/www.scientific.net/KEM.230-232.591

Citation:

I. Ferreira et al., "Influence of Hydrogen Gas Dilution on the Properties of Silicon-Doped Thin Films Prepared by the Hot-Wire Plasma-Assisted Technique", Key Engineering Materials, Vols. 230-232, pp. 591-594, 2002

Online since:

October 2002

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$35.00

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