Role of the i-Layer Thickness in the Performance of a-Si:H Schottky Barrier Photodiodes

Hugo Águas; Elvira Fortunato; Luís Pereira; V. Silva; Rodrigo Martins

doi:10.4028/www.scientific.net/KEM.230-232.587

Paper Titles

Highly Conductive/Transparent ZnO:Al Thin Films Deposited at Room Temperature by rf Magnetron Sputtering
p.571

The Study of Dipolar and Space Charges in Semicrystalline Polymers
p.575

Very Low Frequency Dielectric Relaxation Deduced from Time Domain Measurements
p.579

Influence of the Plasma Regime on the Structural, Optical and Transport Properties of a-Si:H Thin Films
p.583

Role of the i-Layer Thickness in the Performance of a-Si:H Schottky Barrier Photodiodes
p.587

Influence of Hydrogen Gas Dilution on the Properties of Silicon-Doped Thin Films Prepared by the Hot-Wire Plasma-Assisted Technique
p.591

Processing and Characterization of Ba-Based Layered Ferroelectric Relaxors
p.595

Structural Characterisation of Zinc Oxide Thin Films Produced by Spray Pyrolysis
p.599

Growth Model of Gas Species Produced by the Hot-Wire and Hot-Wire Plasma-Assisted Techniques
p.603

HomeKey Engineering MaterialsKey Engineering Materials Vols. 230-232Role of the i-Layer Thickness in the Performance...

Role of the i-Layer Thickness in the Performance of a-Si:H Schottky Barrier Photodiodes

Abstract:

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Key Engineering Materials (Volumes 230-232)

Pages:

587-590

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.230-232.587

Citation:

Cite this paper

Online since:

October 2002

Authors:

Hugo Águas, Elvira Fortunato, Luís Pereira, V. Silva, Rodrigo Martins

Keywords:

Amorphous Silicon, Atomic Force Microscope (AFM), I-V Curves, MTPECVD, Position Sensors, Schottky Diode

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] E. Fortunato, F. Soares, G. Lavareda, and R. Martins: Mat. Res. Soc. Symp. Proc. Vol. 377 (1995), p.797.

Google Scholar

[2] S. Arimoto, H. Yamamoto, H. Ohno, H. Hasegawa: J. Appl. Phys. 57 (10), (1985), p.4778

Google Scholar

[3] E. Fortunato, A. Malik, R. Martins: J. Non-Cryst. Solids, Vol. 227-230 (1998), p.1230

Google Scholar

[4] Elvira E. Fortunato, R. Martins, in “Properties of amorphous silicon and its alloys”, ed. J.L. Sears, EMIS DATA review series, (1998), p.273.

Google Scholar

[5] D. E. Heller, R. M. Dawson, C. T. Malone, S. Nag, and C. R. Wronsky: J. Appl. Phys. Vol 72(6), (1992), p.2377.

Google Scholar

[6] G. Ganguly, T. Ikeda, I Sakada and A. Matsuda: Mat. Res. Soc. Symp. Proc. Vol. 420 (1996), p.347.

Google Scholar

[7] H. Águas, R. Martins, E. Fortunato: Influence of a dc grid on silane rf plasma properties, Vacuum 2001 (in press).

DOI: 10.1016/s0042-207x(01)00343-8

Google Scholar

[8] H. Águas, R. Martins, Y. Nunes, M. Maneira, E. Fortunato: Materials Science Forum, 382 (2001) pp.11-20.

Google Scholar

[9] Nacer Layadi, Croissance de couches minces de silicium amorphe et microcristalline préparées par méthodes plasma et traitement laser, Ph.D. these (1994), Ecole Polytechnique de Paris.

Google Scholar

[10] X. Deng, S.J. Jones, J. Evans, M. Izu: Mat. Res. Soc. Symp. Proc. Vol. 377 (1995), p.803.

Google Scholar

[11] V. Chu: Schottky barriers on amorphous silicon and amorphous silicon-germanium alloys (1990) Princeton University-UMI publisher.

Google Scholar

[12] E. Fortunato, A. Malik, R. Martins: Sensors and Actuators 46 (1998), p.202.

Google Scholar