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HomeKey Engineering MaterialsKey Engineering Materials Vol. 248Effect of High-Voltage Screening on Titania...

Effect of High-Voltage Screening on Titania Ceramics with Different Surface Finishing

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Electroceramics in Japan VI

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Periodical:

Key Engineering Materials (Volume 248)

Pages:

199-0

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.248.199

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Online since:

August 2003

Authors:

Tomohiro Tanaka, Akira Kishimoto

Keywords:

Dielectric Breakdown, Median crack, Screening, Titania Ceramics

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[8] (1995) 2248-2250.

[2] K. Endo, A. Kishimoto, N. Motohira, Y. Nakamura and H. Yanagida, J. Ceram. Soc. Jpn., 103 [10] (1995) 1090-1092.

[3] A. Kishimoto, K. Endo, N. Motohira, Y. Nakamura H. Yanagida, and M. Miyayama, J. Mater. Sci., 31 (1996) 3419-3425.

DOI: 10.1007/bf00360743

[4] T. Tanaka and A. Kishimoto, Kor. J. Ceram. Soc., 5[4](1999)386-389.

[5] A. Kishimoto and T. Tanaka, J. Am. Ceram. Soc., 83[6] (2000)1413-16.

[6] A. Kishimoto, K. Koumoto and H. Yanagida, 24 [2] (1989) 698-702.

[7] A. Kishimoto, K. Koumoto and H. Yanagida, J. Am. Ceram. Soc., 72 [8] (1989) 1373-1376.

[8] Y. Nakamura, M. Suzuki, N. Motohira, A. Kishimoto and H. Yanagida, J. Mater. Sci., 32 [1] (1997) 115-118.

[9] A. Kishimoto, M. Nameki, K. Koumoto and H. Yanagida, Eng. Fracture Mechanics, 40 [4/5] (1991) 927-930.

DOI: 10.1016/0013-7944(91)90253-w

[10] Y. Matsuo, T. Ogasawara, S. Kimura and E. Yasuda, J. Mater. Sci., 22 (1987) 1482-88.

[11] T. Asokan and T. S. Sudarshan IEEE, Trans, Elect, Insl., 28 [4] (1993) 3419-3425.

[12] E. K. Beauchamp, J. Am. Ceram. Soc., 54 [10] (1971) 484-487.

[13] A. G. Evans and S. M. Wiederhorn, Int. J. Fract. Mech., 10[3] (1974) 379-392. E-mail: kishim-a@ceram. iis. u-tokyo. ac. jp, Tel.: +81-3-5452-6342, Fax: +81-3-5452-6343.