Polycrystalline Silicon Thin Films on SiC Substrates for Solar Cells

Abstract:

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The thin-film of silicon deposited by RTCVD on pressureless sintered SiC substrate with the size of 30mm×20mm, which is cleaned by ultrasonic method and chemical treatment. The crystal size of silicon columnar grain can reach 190 µm and its preferred orientation is [111] after ZMR process.

Info:

Periodical:

Key Engineering Materials (Volumes 280-283)

Edited by:

Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li

Pages:

1147-1148

DOI:

10.4028/www.scientific.net/KEM.280-283.1147

Citation:

H. F. Li et al., "Polycrystalline Silicon Thin Films on SiC Substrates for Solar Cells", Key Engineering Materials, Vols. 280-283, pp. 1147-1148, 2005

Online since:

February 2007

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Price:

$35.00

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