Mechanical Properties and Process of ZnO Deposited Various Substrates

Abstract:

ZnO is an n-type semiconductor having a hexagonal wurzite structure. ZnO exhibits good piezoelectric, photoelectric and optical properties and might be a good candidate for an electroluminescence device like an UV laser diode. But the important problems, such as substrate kinds and substrate temperature are raised its head, so they need to optimize deposit condition. Because these devices are very small and films are very thin, those are often prepared in limited quantities and shapes unsuitable for the extensive mechanical test. In this present work, ZnO thin films are prepared on the glass, GaAs (100), Si (111) and Si (100) substrates at different temperatures by the pulsed laser deposition (PLD) method. ZnO was evaluated in term of crystalline through X-ray diffraction (XRD), mechanical properties such as hardness, elastic modulus through nano-indenter. XRD measurements indicate that the substrate temperature of 200-500, 200-500, 300-500, and 300-500oC was the optimized conditions of crystalline for the glass, GaAs (100), Si (111), and Si (100) substrates, respectively. In spite of the films deposited on the different substrates, the films always show (002) orientation at the optimized conditions. Mechanical properties such as hardness and elastic modulus are influenced substrate crystallization. In case of Si (111) substrate, hardness and elastic modulus are about 10, 150GPa, respectively.

• Periodical: Key Engineering Materials (Volumes 297-300)
• Pages: 533-538
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.297-300.533
• Online since: November 2005
• Authors: Hun Chae Jung, Han Ki Yoon, Yun Sik Yu
• Keywords: Elastic Modulus, Hardness, Nano Indentation Method, Pulsed Laser Deposition (PLD), Substrate Effect, Zinc Oxide (ZnO)

References

[1] R.D. Vispute, V. Talyansky, R.P. Sharma, S. Choopun, M. Downes, T. Venkatesan, Y.X. Li, L.G. Salamanca-Riba, A.A. Iliadis, K.A. Jones and J. McGarrity: Applied Surface Science Vol. 127-129 (1998), pp.431-439.

DOI: 10.1016/s0169-4332(97)00668-5

[2] F.K. Shan and Y.S. Yu: Thin Solid Films Vol. 435 (2003), pp.174-178.

[3] D.C. Look: Materials Science and Engineering B Vol. 80 (2001), pp.383-387.

[4] J. Han, A.M.R. Senos and P.Q. Mantas: Journal of the European Ceramic Society Vol. 22 (2002), pp.1653-1660.

[5] Q.P. Wang, D.H. Zhang, Z.Y. Xue and X.J. Zhang: Optical Materials Vol. 26 (2004), pp.23-26.

[6] Y. Nakanishi, A. Miyake, H. Kominami, T. Aoki, Y. Hatanaka and G. Shimaoka: Applied Surface Science Vol. 142 (1999), pp.233-236.

DOI: 10.1016/s0169-4332(98)00654-0

[7] K.H. Bang, D.K. Hwang, S.W. Lim and J.M. Myoung: Journal of Crystal Growth Vol. 250 (2003), pp.437-443.

[8] Jie Zhao, Lizhong Hu, Zhaoyang Wang, Yu Zhao, Xiuping Liang and Meitian Wang: Applied Surface Science Vol. 229 (2004), pp.311-315.

[9] E.G. Herbert, G.M. Pharr, W.C. Oliver, B.N. Lucas and J.L. Hay: Thin Solid Films Vol. 398-399 (2001), pp.331-335.

DOI: 10.1016/s0040-6090(01)01439-0

[10] J.H. Han: Journal of the KSME Vol. 42 No. 11 (2002), pp.48-54.

[11] B.D. Cullity: 2nd edition (Addison-Wesley Pub. Co., 1978).

[12] K.L. Chopra, S. Major and D.K. Pandya: Thin Solid Films Vol. 102 (1983), pp.1-46.

[13] Fujimura, T. Nishihara, S. Goto, J. Xu and T. Ito: Journal of Crystal Growth Vol. 130 (1993), pp.269-279.

[14] T. Makino, G. Isoya, Y. Segawa, C.H. Chia, T. Yasuda, M. Kawasaki, A. Ohtomo, K. Tamura and H. Koinuma: J. Crystal Growth Vol. 214-215 (2000), pp.289-293.

DOI: 10.1016/s0022-0248(00)00094-4

[15] H.J. Ko, Y.F. Chen, Z. Zhu and T. Yao: Appl. Phys. Lett. 76 (2000), p.1905-(1907).

[16] Y.R. Ryu, S. Zhu, J.D. Budai, H.R. Chandrasekhar, P.F. Miceli and H.W. White: J. Appl. Phys. 88 (2000), pp.201-204.

[17] J. Malzbender, G. de With and J.M.J. den Toonder: Thin Solid Films 366 (2000), pp.139-149.

[18] I. Ozen, M.A. Gulgun and Meric Ozcan: Key Engineering Material Vol. 264-268 (2004), pp.1225-1228.

[19] S. Suresh and A.E. Giannakopoulos: Acta mater Vol. 46 No. 16 (1998), pp.5755-5767.