Fabrication of Bi-Te Based Thermoelectric Semiconductors by Using Hybrid Powders

Abstract:

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P-type Bi0.5Sb1.5Te3 compounds doped with 3wt% Te were fabricated by spark plasma sintering and their mechanical and thermoelectric properties were investigated. The sintered compounds with the bending strength of more than 50MPa and the figure-of-merit 2.9×10-3/K were obtained by controlling the mixing ratio of large powders (PL) and small powders (PS). Compared with the conventionally prepared single crystal thermoelectric materials, the bending strength was increased up to more than three times and the figure-of-merit Z was similar those of single crystals. It is expected that the mechanical properties could be improved by using hybrid powders without degradation of thermoelectric properties.

Info:

Periodical:

Key Engineering Materials (Volumes 297-300)

Edited by:

Young-Jin Kim, Dong-Ho Bae and Yun-Jae Kim

Pages:

875-880

DOI:

10.4028/www.scientific.net/KEM.297-300.875

Citation:

C. H. Lim et al., "Fabrication of Bi-Te Based Thermoelectric Semiconductors by Using Hybrid Powders ", Key Engineering Materials, Vols. 297-300, pp. 875-880, 2005

Online since:

November 2005

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Price:

$35.00

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