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Preparation of Epitaxial LiTaO3 Thin Films by Metal Organic Chemical Vapor Deposition and its Electrical and Optical Properties

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Abstract:

Epitaxial LiTaO3 thin films were deposited on epitaxial Pt(111)/Al2O3(001) and Al2O3(001) substrates by metal organic chemical vapor deposition using LiTa(OC2H5)4(OC2H4OCH3)2 and Li(DPM) precursors. The full-width at half-maximum of the rocking curve of LiTaO3 thin films were respectively 0.29° on Al2O3(001) substrates and 0.98° on epitaxial Pt(111)/Al2O3(001). Electrical measurements showed that the remanent polarization and coercive field of the films were 2Pr=76 μC/cm2 and E =130 kV/cm, respectively. The leakage current density was 10-6–10-8 A/cm2 at 120 kV/cm. Refractive indices n measured at 632.8 nm were measured respectively as 2.15 on Al2O3(001) and 2.14 on Pt(111)/Al2O3(001).

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Periodical:

Key Engineering Materials (Volume 320)

Pages:

57-60

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.320.57

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Online since:

September 2006

Authors:

Takeki Yamamoto, Naoki Wakiya, Nobuyasu Mizutani, Kazuo Shinozaki

Keywords:

Electrical Properties, Epitaxial, LiTaO3, MOCVD, Optical Property, Thin Film

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] Y. SAITO and T. SHIOSAKI, Jpn. J. Appl. Phys., 30 (1991), p.2204.

Google Scholar

[2] C. YE, P. BAUDE and D.L. POLLA, MRS. Symp. Proc., 321 (1994), p.603.

Google Scholar

[3] R. Xu, MRS. Symp. Proc., 415 (1996), p.249.

Google Scholar

[4] L.S. HUNG, MRS. Symp. Proc., 401 (1996), p.231.

Google Scholar

[5] K. SHIRATSUYU, A. SAKURAI, K. TANAKA and Y. SAKABE, Jpn. J. Appl. Phys., 38 (1999), p.5437.

Google Scholar

[6] S.S. PING and L.H. LIN, Ferroelectric, 38 (1981), p.821.

Google Scholar

[7] Y. Xu, Ferroelectric Materials and Their Applications, Elsevier Science Publisher B.V., North-Holland, (1991).

Google Scholar

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