Effect on Crystal Orientation on Residual Stress and Electrical Properties of a PZT Thin Film Deposited on Buffered-Si Substrate

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Changes of residual stress and electrical properties were examined in (001)-oriented and (111)-oriented Pb(Zr0.5Ti0.5)O3 (PZT) thin films deposited on a buffered-Si substrate with a buffer and bottom electrode layer of a (La,Sr)CoO3(LSCO). A (001)-epitaxial PZT film was prepared on LSCO/CeO2 /Zr0.85Y0.15O1.93(YSZ)/Si. In addition, a (111)-oriented PZT film was prepared on LSCO/SrTiO3(ST) /Mn0.24Zn0.09Fe2.67O4(MZF)/YSZ/Si. The residual tensile stress in (001)-PZT thin films decreased from 2.92 to 1.98 GPa and the remanent polarization increased from 7.5 to 41.7 @C/cm2 as the LSCO thickness increased. In (111)-PZT, the residual tensile stress decreased from 1.72 to 0.95 GPa and remanent polarization increased from 9.5 to 26.7 @C/cm2. The residual tensile stress of (111)-PZT was less than that of (001)-PZT. The remanent polarization in the 80 nm (111)-PZT was greater than that of the 60 nm (001)-PZT. In the 700-nm-thick PZT, the remanent polarization in (001)-PZT was greater than that in (111)-PZT.

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Periodical:

Edited by:

Keiichi Katayama, Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki

Pages:

65-68

DOI:

10.4028/www.scientific.net/KEM.320.65

Citation:

K. Fujito et al., "Effect on Crystal Orientation on Residual Stress and Electrical Properties of a PZT Thin Film Deposited on Buffered-Si Substrate ", Key Engineering Materials, Vol. 320, pp. 65-68, 2006

Online since:

September 2006

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$35.00

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