Effect on Crystal Orientation on Residual Stress and Electrical Properties of a PZT Thin Film Deposited on Buffered-Si Substrate

Keisuke Fujito; Naoki Wakiya; Takanori Kiguchi; Nobuyasu Mizutani; Kazuo Shinozaki

doi:10.4028/www.scientific.net/KEM.320.65

Paper Titles

Electrical Properties of Perovskite-Based Ferroelectric Thin Films Modified Using Rare-Earth Elements
p.49

In Situ Simultaneous Observation of Phase Transition and Electrical Properties of Pb(Zr,Ti)O₃ Thin Film by High Temperature XRD and Electrical Measurement Apparatus
p.53

Preparation of Epitaxial LiTaO₃ Thin Films by Metal Organic Chemical Vapor Deposition and its Electrical and Optical Properties
p.57

Photovoltaic Effect with the Structural Control and its Application to the Optical Sensor
p.61

Effect on Crystal Orientation on Residual Stress and Electrical Properties of a PZT Thin Film Deposited on Buffered-Si Substrate
p.65

Orientation Control of Perovskite Epitaxial Thin Film on Silicon Substrate with Yttria-Stabilized Zirconia Buffer Layers
p.69

Characterization of Dielectric Properties of Alkoxy-Derived (Y,Yb)MnO₃ Ferroelectrics /HfO₂ Stacking Layers
p.73

Chemically Deposited (100)-Oriented BaTiO₃ Films with Highly Concentrated Solution Using High Crystallinity BaTiO₃ as a Buffer Layer
p.77

Fabrication and Electrical Characterization of Epitaxially Grown (Ba,Sr)TiO₃ Thin Films Prepared by Sol-Gel Method
p.81

HomeKey Engineering MaterialsKey Engineering Materials Vol. 320Effect on Crystal Orientation on Residual Stress...

Effect on Crystal Orientation on Residual Stress and Electrical Properties of a PZT Thin Film Deposited on Buffered-Si Substrate

Abstract:

Changes of residual stress and electrical properties were examined in (001)-oriented and (111)-oriented Pb(Zr0.5Ti0.5)O3 (PZT) thin films deposited on a buffered-Si substrate with a buffer and bottom electrode layer of a (La,Sr)CoO3(LSCO). A (001)-epitaxial PZT film was prepared on LSCO/CeO2 /Zr0.85Y0.15O1.93(YSZ)/Si. In addition, a (111)-oriented PZT film was prepared on LSCO/SrTiO3(ST) /Mn0.24Zn0.09Fe2.67O4(MZF)/YSZ/Si. The residual tensile stress in (001)-PZT thin films decreased from 2.92 to 1.98 GPa and the remanent polarization increased from 7.5 to 41.7 @C/cm2 as the LSCO thickness increased. In (111)-PZT, the residual tensile stress decreased from 1.72 to 0.95 GPa and remanent polarization increased from 9.5 to 26.7 @C/cm2. The residual tensile stress of (111)-PZT was less than that of (001)-PZT. The remanent polarization in the 80 nm (111)-PZT was greater than that of the 60 nm (001)-PZT. In the 700-nm-thick PZT, the remanent polarization in (001)-PZT was greater than that in (111)-PZT.