Fabrication and Electrical Characterization of Epitaxially Grown (Ba,Sr)TiO3 Thin Films Prepared by Sol-Gel Method

Tadasu Hosokura; Akira Ando; Yukio Sakabe

doi:10.4028/www.scientific.net/KEM.320.81

Paper Titles

Effect on Crystal Orientation on Residual Stress and Electrical Properties of a PZT Thin Film Deposited on Buffered-Si Substrate
p.65

Orientation Control of Perovskite Epitaxial Thin Film on Silicon Substrate with Yttria-Stabilized Zirconia Buffer Layers
p.69

Characterization of Dielectric Properties of Alkoxy-Derived (Y,Yb)MnO₃ Ferroelectrics /HfO₂ Stacking Layers
p.73

Chemically Deposited (100)-Oriented BaTiO₃ Films with Highly Concentrated Solution Using High Crystallinity BaTiO₃ as a Buffer Layer
p.77

Fabrication and Electrical Characterization of Epitaxially Grown (Ba,Sr)TiO₃ Thin Films Prepared by Sol-Gel Method
p.81

Crystallization Behavior of KNbO₃ Series Precursors Synthesized by CSD Process
p.85

Synthesis of Oxide Thin Films on Silicon Substrate Using Supercritical Carbon Dioxide Fluid
p.91

Fabrication and Application of MoSi₂ Thin Film Electric Heaters
p.95

B- and P-Doped Si_0.8Ge_0.2 Thin Film Deposited by Helicon Sputtering for the Micro-Thermoelectric Gas Sensor
p.99

HomeKey Engineering MaterialsKey Engineering Materials Vol. 320Fabrication and Electrical Characterization of...

Fabrication and Electrical Characterization of Epitaxially Grown (Ba,Sr)TiO₃ Thin Films Prepared by Sol-Gel Method

Abstract:

Epitaxially grown (Ba,Sr)TiO3 thin films were prepared on platinum-coated silicon substrate by sol-gel method using a (Ba,Sr)TiO3 sol derived from Ba(CH3COO)2, Sr(CH3COO)2 and Ti(O-i-C3H7)4. The morphology of the films was found to depend on the annealing condition. A columnar structure was obtained for (Ba,Sr)TiO3 thin film by annealing at 800 °C and a columnar grain was found to be single crystal by transmission electron microscope (TEM). The columnar grown film exhibits a preferred (111) orientation that follows the (111) orientation of Pt substrate. Measurement of the C-V in MFM was configured in order to demonstrate good dielectric properties. Obtained films showed high voltage tunability.