Fabrication and Electrical Characterization of Epitaxially Grown (Ba,Sr)TiO3 Thin Films Prepared by Sol-Gel Method
Epitaxially grown (Ba,Sr)TiO3 thin films were prepared on platinum-coated silicon substrate by sol-gel method using a (Ba,Sr)TiO3 sol derived from Ba(CH3COO)2, Sr(CH3COO)2 and Ti(O-i-C3H7)4. The morphology of the films was found to depend on the annealing condition. A columnar structure was obtained for (Ba,Sr)TiO3 thin film by annealing at 800 °C and a columnar grain was found to be single crystal by transmission electron microscope (TEM). The columnar grown film exhibits a preferred (111) orientation that follows the (111) orientation of Pt substrate. Measurement of the C-V in MFM was configured in order to demonstrate good dielectric properties. Obtained films showed high voltage tunability.
Keiichi Katayama, Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
T. Hosokura, A. Ando, Y. Sakabe, "Fabrication and Electrical Characterization of Epitaxially Grown (Ba,Sr)TiO3 Thin Films Prepared by Sol-Gel Method ", Key Engineering Materials, Vol. 320, pp. 81-84, 2006