B- and P-Doped Si0.8Ge0.2 Thin Film Deposited by Helicon Sputtering for the Micro-Thermoelectric Gas Sensor

Kazuki Tajima; Woosuck Shin; Maiko Nishibori; Norimitsu Murayama; Toshio Itoh; Noriya Izu; Ichiro Matsubara

doi:10.4028/www.scientific.net/KEM.320.99

Paper Titles

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Crystallization Behavior of KNbO₃ Series Precursors Synthesized by CSD Process
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Synthesis of Oxide Thin Films on Silicon Substrate Using Supercritical Carbon Dioxide Fluid
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Fabrication and Application of MoSi₂ Thin Film Electric Heaters
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B- and P-Doped Si_0.8Ge_0.2 Thin Film Deposited by Helicon Sputtering for the Micro-Thermoelectric Gas Sensor
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Defect Structure in (Zn,Mg)O Films Prepared on YSZ Substrate
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Evaluation of Planar-Type Thin Film ZnO Varistors Fabricated Using Pulsed Laser Ablation
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Near-Infrared Light Emission from of Er-Doped ZnO Thin Film in Micropits Processed on Si Substrate
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Relation Between Grain Boundary and Electrical Degradation of ZnO Varistors
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B- and P-Doped Si_0.8Ge_0.2 Thin Film Deposited by Helicon Sputtering for the Micro-Thermoelectric Gas Sensor

Abstract:

Micro-thermoelectric hydrogen sensor (micro-THS) with the combination of the thermoelectric effect of Si0.8Ge0.2 thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation was prepared by microfabrication process. In the viewpoint of high sensitivity of micro-THS, the thermoelectric properties of the Si0.8Ge0.2 thin film could be improved by optimizing carrier concentration using helicon sputtering with an advantage of easy doping control, and sensitivity of the device with this thin film was investigated. As the result, the boron-doped Si0.8Ge0.2 thin film is considered to be the better choice ensuring the reliable monitoring of hydrogen concentration down to ppm level.