Orientation Control of Perovskite Epitaxial Thin Film on Silicon Substrate with Yttria-Stabilized Zirconia Buffer Layers

Masao Kondo; Kazuaki Kurihara

doi:10.4028/www.scientific.net/KEM.320.69

Paper Titles

In Situ Simultaneous Observation of Phase Transition and Electrical Properties of Pb(Zr,Ti)O₃ Thin Film by High Temperature XRD and Electrical Measurement Apparatus
p.53

Preparation of Epitaxial LiTaO₃ Thin Films by Metal Organic Chemical Vapor Deposition and its Electrical and Optical Properties
p.57

Photovoltaic Effect with the Structural Control and its Application to the Optical Sensor
p.61

Effect on Crystal Orientation on Residual Stress and Electrical Properties of a PZT Thin Film Deposited on Buffered-Si Substrate
p.65

Orientation Control of Perovskite Epitaxial Thin Film on Silicon Substrate with Yttria-Stabilized Zirconia Buffer Layers
p.69

Characterization of Dielectric Properties of Alkoxy-Derived (Y,Yb)MnO₃ Ferroelectrics /HfO₂ Stacking Layers
p.73

Chemically Deposited (100)-Oriented BaTiO₃ Films with Highly Concentrated Solution Using High Crystallinity BaTiO₃ as a Buffer Layer
p.77

Fabrication and Electrical Characterization of Epitaxially Grown (Ba,Sr)TiO₃ Thin Films Prepared by Sol-Gel Method
p.81

Crystallization Behavior of KNbO₃ Series Precursors Synthesized by CSD Process
p.85

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Orientation Control of Perovskite Epitaxial Thin Film on Silicon Substrate with Yttria-Stabilized Zirconia Buffer Layers

Abstract:

The influence of a rare earth oxide/yttria-stabilized zirconia (YSZ) double buffer layer structure on the orientation of a perovskite thin film was investigated on (100) silicon substrates. A calcium titanate perovskite film with a mixture of (110) and (100) orientation was grown epitaxially on a YSZ buffer layer. Since rare earth oxides have almost the same chemical nature and different lattice parameters, it is anticipated that the lattice parameter of the buffer layer can be controlled by changing the rare earth element. An (100) oriented epitaxial calcium titanate film was obtained by changing the composition of rare earth oxides on the YSZ/Si substrate.