Orientation Control of Perovskite Epitaxial Thin Film on Silicon Substrate with Yttria-Stabilized Zirconia Buffer Layers

Abstract:

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The influence of a rare earth oxide/yttria-stabilized zirconia (YSZ) double buffer layer structure on the orientation of a perovskite thin film was investigated on (100) silicon substrates. A calcium titanate perovskite film with a mixture of (110) and (100) orientation was grown epitaxially on a YSZ buffer layer. Since rare earth oxides have almost the same chemical nature and different lattice parameters, it is anticipated that the lattice parameter of the buffer layer can be controlled by changing the rare earth element. An (100) oriented epitaxial calcium titanate film was obtained by changing the composition of rare earth oxides on the YSZ/Si substrate.

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Periodical:

Edited by:

Keiichi Katayama, Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki

Pages:

69-72

DOI:

10.4028/www.scientific.net/KEM.320.69

Citation:

M. Kondo, K. Kurihara, "Orientation Control of Perovskite Epitaxial Thin Film on Silicon Substrate with Yttria-Stabilized Zirconia Buffer Layers ", Key Engineering Materials, Vol. 320, pp. 69-72, 2006

Online since:

September 2006

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$35.00

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