Chemically Deposited (100)-Oriented BaTiO3 Films with Highly Concentrated Solution Using High Crystallinity BaTiO3 as a Buffer Layer

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BaTiO3 films with thickness of ~1 2m were prepared by chemical solution deposition on LaNiO3/Pt/TiOx/SiO2/Si substrate with a thin highly (100)-oriented and high crystallinity BaTiO3 thin film (~140 nm) as a buffer layer. The BaTiO3 films prepared by using a 0.5 mol/L solution have high crystallinity and still show (100) preferred orientation. The electrical properties of the (100)-oriented BaTiO3 films prepared by this process have been studied. A dielectric constant of ~910 and a loss tangent of ~3.5% (1 kHz) were obtained. The remanent polarization (2 Pr) and coercive field (2 Ec) are 4.0 μC/cm2 and 35 kV/cm, respectively.

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Periodical:

Edited by:

Keiichi Katayama, Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki

Pages:

77-80

DOI:

10.4028/www.scientific.net/KEM.320.77

Citation:

Y. P. Guo et al., "Chemically Deposited (100)-Oriented BaTiO3 Films with Highly Concentrated Solution Using High Crystallinity BaTiO3 as a Buffer Layer ", Key Engineering Materials, Vol. 320, pp. 77-80, 2006

Online since:

September 2006

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Price:

$35.00

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