Chemically Deposited (100)-Oriented BaTiO3 Films with Highly Concentrated Solution Using High Crystallinity BaTiO3 as a Buffer Layer

Yi Ping Guo; Kazuyuki Suzuki; Kaori Nishizawa; Takeshi Miki; Kazumi Kato

doi:10.4028/www.scientific.net/KEM.320.77

Paper Titles

Photovoltaic Effect with the Structural Control and its Application to the Optical Sensor
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Effect on Crystal Orientation on Residual Stress and Electrical Properties of a PZT Thin Film Deposited on Buffered-Si Substrate
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Orientation Control of Perovskite Epitaxial Thin Film on Silicon Substrate with Yttria-Stabilized Zirconia Buffer Layers
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Characterization of Dielectric Properties of Alkoxy-Derived (Y,Yb)MnO₃ Ferroelectrics /HfO₂ Stacking Layers
p.73

Chemically Deposited (100)-Oriented BaTiO₃ Films with Highly Concentrated Solution Using High Crystallinity BaTiO₃ as a Buffer Layer
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Fabrication and Electrical Characterization of Epitaxially Grown (Ba,Sr)TiO₃ Thin Films Prepared by Sol-Gel Method
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Crystallization Behavior of KNbO₃ Series Precursors Synthesized by CSD Process
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Synthesis of Oxide Thin Films on Silicon Substrate Using Supercritical Carbon Dioxide Fluid
p.91

Fabrication and Application of MoSi₂ Thin Film Electric Heaters
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 320Chemically Deposited (100)-Oriented BaTiO3 Films...

Chemically Deposited (100)-Oriented BaTiO₃ Films with Highly Concentrated Solution Using High Crystallinity BaTiO₃ as a Buffer Layer

Abstract:

BaTiO3 films with thickness of ~1 2m were prepared by chemical solution deposition on LaNiO3/Pt/TiOx/SiO2/Si substrate with a thin highly (100)-oriented and high crystallinity BaTiO3 thin film (~140 nm) as a buffer layer. The BaTiO3 films prepared by using a 0.5 mol/L solution have high crystallinity and still show (100) preferred orientation. The electrical properties of the (100)-oriented BaTiO3 films prepared by this process have been studied. A dielectric constant of ~910 and a loss tangent of ~3.5% (1 kHz) were obtained. The remanent polarization (2 Pr) and coercive field (2 Ec) are 4.0 μC/cm2 and 35 kV/cm, respectively.