Characterization of Dielectric Properties of Alkoxy-Derived (Y,Yb)MnO3 Ferroelectrics /HfO2 Stacking Layers

Abstract:

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The Y0.5Yb0.5MnO3 ferroelectrics/HfO2 stacking layer was constructed on Si(100) substrate through the chemical solution deposition. The HfO2 insulating layer crystallized on Si(100) substrates consisted of uniform grains and had smooth surface. The Y0.5Yb0.5MnO3 film prepared on the HfO2 insulator layer had preferred orientation along c-axis. The Y0.5Yb0.5MnO3 film consisted of uniform grains and had smooth surface. The clockwise C-V hysteresis induced by ferroelectric polarization switching was observed in the MFIS structure. The memory window of the MFIS structure was about 2 V and the retention time was over 105 s.

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Periodical:

Edited by:

Keiichi Katayama, Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki

Pages:

73-76

DOI:

10.4028/www.scientific.net/KEM.320.73

Citation:

K. Suzuki et al., "Characterization of Dielectric Properties of Alkoxy-Derived (Y,Yb)MnO3 Ferroelectrics /HfO2 Stacking Layers", Key Engineering Materials, Vol. 320, pp. 73-76, 2006

Online since:

September 2006

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$35.00

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