In this experiment UDP450 was used to prepare the CrAlTiN films with different Y contents deposited on Si(100) substrates. The thickness and structure of CrAlTiN films were characterized by scanning electron microscopy (SEM). The results show that the thickness of CrAlTiN films increases with the increasing of Y contents in Al targets. Meanwhile, the structures of these films are column structures with the least changes. XPS and EDS results indicate that Al contents in the films also increased with the increasing of Y contents in Al targets. Voltages of Al targets were changed with the variation of Y contents in Al targets when CrAlTiN layers were formed. The current of Al targets was a constant during producing CrAlTiN layer. The original voltages of Al targets during forming CrAlTiN layers increased greatly with the increase of Y contents in Al targets. The results show that the collision probability between the neutral particles and positive ions increased in the vacuum chamber. This indicates that the sputtering yield of Al targets is increased at a higher voltage. Consequently, the growing speed of CrAlTiN film and the sputtering yield of Al targets are all improved with the addition of Y element.