Li(Ga1-xMx)O2 (M: B or Al) Single Crystals Grown by Floating Zone Method

Hideo Kimura; Rumi Tanahashi; Koji Maiwa

doi:10.4028/www.scientific.net/KEM.421-422.185

Paper Titles

Effects of Pretreatments on Deposition Rate of Films in Aerosol Deposition Method
p.165

Study on Improvement of Oxidation-Resistant Capability of Metal-Silicide Thin Film and Application to Heater
p.169

Preparation of Thin Films of TiO₂-Nanoparticles Using Electrophoresis Deposition Method
p.173

Monte Carlo Investigation of Ferroelectric Properties in Thin Films
p.177

Li(Ga_1-xM_x)O₂ (M: B or Al) Single Crystals Grown by Floating Zone Method
p.185

Crystallization Behavior of Ferroelectric Glass-Ceramics of the Na₂O-Nb₂O₅-Al₂O₃-SiO₂ System Contained TiO₂
p.189

Zinc Self-Diffusion in Isotopic Heterostructured Zinc Oxide Thin Films
p.193

Observation of Diffusion Behavior in Al-Implanted ZnO Single Crystal
p.197

Redistributing Unintentional Defects Induced by Heavy Ion Implantation in ZnO Ceramics
p.201

HomeKey Engineering MaterialsKey Engineering Materials Vols. 421-422Li(Ga1-xMx)O2 (M: B or Al) Single Crystals Grown...

Li(Ga_1-xM_x)O₂ (M: B or Al) Single Crystals Grown by Floating Zone Method

Abstract:

Li(Ga1-xMx)O2 (M: B or Al) single crystals are grown by Floating zone method. These crystals are characterized from the viewpoint of the substitution of M, such as lattice parameter (lattice volume) change, piezoelectric properties and nonlinear optics. The lattice volume is decreased with the increase of Al content for Al-substitution largely, but the change is a little for B-substitution.