Redistributing Unintentional Defects Induced by Heavy Ion Implantation in ZnO Ceramics

Abstract:

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The relationship between the defect structure and luminescence property of ZnO ceramics implanted with Ar of 2×1015 – 60×1015 ions/cm2 was studied. After annealing, the heavy dose-implanted sample (Ar ≥ 30×1015 ions/cm2) was characterized by a luminescence peak at the 730-nm wavelength. Defects in the implanted region formed voids during post-annealing. Oxygen tracer experiments indicated that grain boundary diffusion in the implanted region was enhanced significantly.

Info:

Periodical:

Key Engineering Materials (Volumes 421-422)

Edited by:

Tadashi Takenaka, Hajime Haneda, Kazumi Kato, Masasuke Takata and Kazuo Shinozaki

Pages:

201-204

DOI:

10.4028/www.scientific.net/KEM.421-422.201

Citation:

I. Sakaguchi et al., "Redistributing Unintentional Defects Induced by Heavy Ion Implantation in ZnO Ceramics", Key Engineering Materials, Vols. 421-422, pp. 201-204, 2010

Online since:

December 2009

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Price:

$35.00

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