Redistributing Unintentional Defects Induced by Heavy Ion Implantation in ZnO Ceramics
The relationship between the defect structure and luminescence property of ZnO ceramics implanted with Ar of 2×1015 – 60×1015 ions/cm2 was studied. After annealing, the heavy dose-implanted sample (Ar ≥ 30×1015 ions/cm2) was characterized by a luminescence peak at the 730-nm wavelength. Defects in the implanted region formed voids during post-annealing. Oxygen tracer experiments indicated that grain boundary diffusion in the implanted region was enhanced significantly.
Tadashi Takenaka, Hajime Haneda, Kazumi Kato, Masasuke Takata and Kazuo Shinozaki
I. Sakaguchi et al., "Redistributing Unintentional Defects Induced by Heavy Ion Implantation in ZnO Ceramics", Key Engineering Materials, Vols. 421-422, pp. 201-204, 2010