Redistributing Unintentional Defects Induced by Heavy Ion Implantation in ZnO Ceramics

Isao Sakaguchi; Tsubasa Nakagawa; Kenji Matsumoto; Syunichi Hishita; Yutaka Adachi; Naoki Ohashi; Hajime Haneda

doi:10.4028/www.scientific.net/KEM.421-422.201

Paper Titles

Li(Ga_1-xM_x)O₂ (M: B or Al) Single Crystals Grown by Floating Zone Method
p.185

Crystallization Behavior of Ferroelectric Glass-Ceramics of the Na₂O-Nb₂O₅-Al₂O₃-SiO₂ System Contained TiO₂
p.189

Zinc Self-Diffusion in Isotopic Heterostructured Zinc Oxide Thin Films
p.193

Observation of Diffusion Behavior in Al-Implanted ZnO Single Crystal
p.197

Redistributing Unintentional Defects Induced by Heavy Ion Implantation in ZnO Ceramics
p.201

Radiation of X-Rays in Low-Pressure Gas Using LiNbO₃ Single Crystal
p.205

Effect of Zr-Addition on Electric Degradation Characteristics of ZnO Varistors
p.209

Crystallization and Raman Spectra of Langasite-Type Na₂CaGe₆O₁₄, Na₂SrGe₆O₁₄ and Pb₃Ga₂Ge₄O₁₄ in Corresponding Glasses
p.213

Dielectric and Magnetic Properties of CoFe₂O₄-BaTiO₃ Composite Thick Film
p.219

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Redistributing Unintentional Defects Induced by Heavy Ion Implantation in ZnO Ceramics

Abstract:

The relationship between the defect structure and luminescence property of ZnO ceramics implanted with Ar of 2×1015 – 60×1015 ions/cm2 was studied. After annealing, the heavy dose-implanted sample (Ar ≥ 30×1015 ions/cm2) was characterized by a luminescence peak at the 730-nm wavelength. Defects in the implanted region formed voids during post-annealing. Oxygen tracer experiments indicated that grain boundary diffusion in the implanted region was enhanced significantly.