Study on Improvement of Oxidation-Resistant Capability of Metal-Silicide Thin Film and Application to Heater

Teppei Hayashi; Masashi Satoh; Shinzo Yoshikado

doi:10.4028/www.scientific.net/KEM.421-422.169

Paper Titles

Realization of Tunable Varactors Using Bi_1.5Zn_1.0Nb_1.5O₇ Thin Films
p.153

Influence of an External Magnetic Field on Injected Charges of a Cr₂O₃/Fe/CeO₂/Si MIS Capacitor
p.157

Preparation and Characterization of Silica Film on PBT Substrate by Sol-Gel Method Using Perhydropolysilazane
p.161

Effects of Pretreatments on Deposition Rate of Films in Aerosol Deposition Method
p.165

Study on Improvement of Oxidation-Resistant Capability of Metal-Silicide Thin Film and Application to Heater
p.169

Preparation of Thin Films of TiO₂-Nanoparticles Using Electrophoresis Deposition Method
p.173

Monte Carlo Investigation of Ferroelectric Properties in Thin Films
p.177

Li(Ga_1-xM_x)O₂ (M: B or Al) Single Crystals Grown by Floating Zone Method
p.185

Crystallization Behavior of Ferroelectric Glass-Ceramics of the Na₂O-Nb₂O₅-Al₂O₃-SiO₂ System Contained TiO₂
p.189

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Study on Improvement of Oxidation-Resistant Capability of Metal-Silicide Thin Film and Application to Heater

Abstract:

Thin films of Si-added-MoSi2 were deposited on Si3N4 or alumina substrate using an RF magnetron sputtering with a target made of MoSi2 and Si powders. The thin film consisted of a mixture of Si and MoSi2. The resistance of MoSi2-thin-film heaters fabricated using Si3N4 substrate heated for a long time in air increased with increasing heating-time at temperatures near 420°C due to generation of MoO3, which is an insulator, in thin film due to the oxidation of Mo in MoSi2. On the other hand, oxidation-resistant capability of thin-film heater fabricated by adding Si to MoSi2 was drastically improved compared with MoSi2 thin-film heater, because Si particles or the Si layer on a MoSi2 particle prevented the oxidation of MoSi2. The oxidation-resistant capability was excellent in air at high temperatures near 480°C for a long heating-time exceeding 950h.