Crystallization of Hydrogenated Amorphous Silicon by Rapid Thermal Method

Rui Min Jin; Ding Zhen Li; Lan Li Chen; Xin Feng Guo; Jing Xiao Lu

doi:10.4028/www.scientific.net/KEM.428-429.444

Paper Titles

Research of the Application of Virtual Machine Manufacturing Technology Based on Internet
p.426

Study on the Gloss of Polyurethane Water-Based Ink
p.431

Fabrication of Simple Diode Structure FED Device with Connecting Plate
p.436

Design and Realization of the Data Collecting System Based on USB Bus Line
p.440

Crystallization of Hydrogenated Amorphous Silicon by Rapid Thermal Method
p.444

ZnO Films Growth at Different Temperature on the Substrate of Corning Glass by MOCVD
p.447

Organic Photovoltaic Cells Prepared with Toluene Sulfonic Acid Doped Polypyrrole
p.450

Study on the Triode FED Device with the Improved Insulator
p.454

Growth of ZnO Films under Different Oxygen Partial Pressures by Metal Organic Chemical Vapour Deposition
p.458

HomeKey Engineering MaterialsKey Engineering Materials Vols. 428-429Crystallization of Hydrogenated Amorphous Silicon...

Crystallization of Hydrogenated Amorphous Silicon by Rapid Thermal Method

Abstract:

Amorphous silicon films prepared by PECVD on silex glass substrate has been crystallized by rapid thermal annealing (RTA), From the Raman spectra and scanning electronic microscope (SEM), it was found that the Raman spectra wa best crystallized at 950°C for 5 min. The thin film made by RTA was smoothly and perfect structure.