Crystallization of Hydrogenated Amorphous Silicon by Rapid Thermal Method

Abstract:

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Amorphous silicon films prepared by PECVD on silex glass substrate has been crystallized by rapid thermal annealing (RTA), From the Raman spectra and scanning electronic microscope (SEM), it was found that the Raman spectra wa best crystallized at 950°C for 5 min. The thin film made by RTA was smoothly and perfect structure.

Info:

Periodical:

Key Engineering Materials (Volumes 428-429)

Edited by:

Yuan Ming Huang

Pages:

444-446

DOI:

10.4028/www.scientific.net/KEM.428-429.444

Citation:

R. M. Jin et al., "Crystallization of Hydrogenated Amorphous Silicon by Rapid Thermal Method", Key Engineering Materials, Vols. 428-429, pp. 444-446, 2010

Online since:

January 2010

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Price:

$35.00

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