Crystallization of Hydrogenated Amorphous Silicon by Rapid Thermal Method
Amorphous silicon films prepared by PECVD on silex glass substrate has been crystallized by rapid thermal annealing (RTA), From the Raman spectra and scanning electronic microscope (SEM), it was found that the Raman spectra wa best crystallized at 950°C for 5 min. The thin film made by RTA was smoothly and perfect structure.
Yuan Ming Huang
R. M. Jin et al., "Crystallization of Hydrogenated Amorphous Silicon by Rapid Thermal Method", Key Engineering Materials, Vols. 428-429, pp. 444-446, 2010