Growth of ZnO Films under Different Oxygen Partial Pressures by Metal Organic Chemical Vapour Deposition

C. Wang; X. Yang; B. Liu; C. Zhao; W. Tang; J. Yang; X. Gao; H. Liang; Jie Zhao; J. Sun; G. Du

doi:10.4028/www.scientific.net/KEM.428-429.458

Paper Titles

Crystallization of Hydrogenated Amorphous Silicon by Rapid Thermal Method
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Organic Photovoltaic Cells Prepared with Toluene Sulfonic Acid Doped Polypyrrole
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Study on the Triode FED Device with the Improved Insulator
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Growth of ZnO Films under Different Oxygen Partial Pressures by Metal Organic Chemical Vapour Deposition
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HomeKey Engineering MaterialsKey Engineering Materials Vols. 428-429Growth of ZnO Films under Different Oxygen Partial...

Growth of ZnO Films under Different Oxygen Partial Pressures by Metal Organic Chemical Vapour Deposition

Abstract:

ZnO films were grown under different oxygen partial pressures by metal organic chemical vapor deposition on the substrates of Corning glass. We investigated the quality of the films by SIEMENS D8 X-ray diffractometer. The surface morphology of the films were observed by Digital Nanoscope ІІІa AFM with normal silicon nitride tip in the contact mode. The hall effect measurements were carried out with indium ohmic contact. The transmission spectrum of the films were measured. The transmission ratio is larger than 80% in the region above the wavelength of 385nm, and sharply decreased under 10% below the wavelength of 375 nm.

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Key Engineering Materials (Volumes 428-429)

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458-461

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.428-429.458

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Online since:

January 2010

Authors:

C. Wang, X. Yang, B. Liu, C. Zhao, W. Tang, J. Yang, X. Gao, H. Liang, Jie Zhao, J. Sun, G. Du

Keywords:

Ba ZnO, Glass, Growth, MOCVD, Thin Film

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