Determining the Complete Residual Stress Tensors in SOS Hetero-Epitaxial Thin Film Systems by the Technique of X-Ray Diffraction

Abstract:

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This paper investigates residual stress of epitaxial silicon film on SOS thin film systems. The emphasis was to develop a method to obtain accurately the complete residual stress tensors. It was found that using the multiple asymmetric X-ray diffraction method to measure strains in 13 [hkl] directions, the complete residual stress tensors can be determined reliably. The results were verified by both the Raman Backscattering and the substrate curvature methods.

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Periodical:

Edited by:

Jun Wang,Philip Mathew, Xiaoping Li, Chuanzhen Huang and Hongtao Zhu

Pages:

742-747

DOI:

10.4028/www.scientific.net/KEM.443.742

Citation:

M. Liu et al., "Determining the Complete Residual Stress Tensors in SOS Hetero-Epitaxial Thin Film Systems by the Technique of X-Ray Diffraction ", Key Engineering Materials, Vol. 443, pp. 742-747, 2010

Online since:

June 2010

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$35.00

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