Determining the Complete Residual Stress Tensors in SOS Hetero-Epitaxial Thin Film Systems by the Technique of X-Ray Diffraction

Abstract:

This paper investigates residual stress of epitaxial silicon film on SOS thin film systems. The emphasis was to develop a method to obtain accurately the complete residual stress tensors. It was found that using the multiple asymmetric X-ray diffraction method to measure strains in 13 [hkl] directions, the complete residual stress tensors can be determined reliably. The results were verified by both the Raman Backscattering and the substrate curvature methods.

• Periodical: Key Engineering Materials (Volume 443)
• Pages: 742-747
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.443.742
• Online since: June 2010
• Authors: Mei Liu, Liang Chi Zhang, Andrew Brawley, Petar Atanackovic, Steven Duvall
• Keywords: Multiple Asymmetric X-Ray Diffraction, Residual Stress, Silicon on Sapphire

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