Nano-Surface Modification of Silicon with Ultra-Short Pulse Laser Process

Abstract:

An ultra-short pulse laser process is presented that is based on a photon-induced phonon excitation process for low-temperature nano-surface modification of silicon. The present methodology is based on the concept that the energy required for re-crystallization and activation of the implanted dopants is supplied to the dopant layer via a nonequilibrium adiabatic process induced by ultra-short pulse laser irradiation at room temperature. An ultra-short pulse laser beam with a pulse duration of ~ 100 femtoseconds has been used in the present work for the investigation of surface excitation features via pump-probe reflectivity measurements and for demonstrations of room-temperature re-crystallization and activation of ion-implanted silicon substrates.

• Periodical: Key Engineering Materials (Volume 470)
• Pages: 117-122
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.470.117
• Online since: February 2011
• Authors: Yuichi Setsuhara, Masaki Hashida
• Keywords: Low Temperature Process, Ultra Shallow Junction, Ultra Short Pulse Laser

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