Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures

Naoya Morisawa; Mitsuhisa Ikeda; Katsunori Makihara; Seiichi Miyazaki

doi:10.4028/www.scientific.net/KEM.470.135

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 470Optical Response of Si-Quantum-Dots/NiSi-Nanodots...

Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures

Abstract:

We have studied the effect of 1310 nm light irradiation on the charge distribution of a hybrid floating gate consisting of silicon quantum dots (Si-QDs) and NiSi Nanodots (NiSi-NDs) in MOS capacitors. The light irradiation resulted in reduced flat-band voltage shifts of the MOS capacitors in comparison to the shift in the dark. This result can be interpreted in terms of the shift of the charge centroid toward the gate side in the hybrid floating gate caused by the photoexcitation of electrons in NiSi-NDs and the subsequent electron tunneling to Si-QDs. The capacitance of the MOS capacitors at constant gate biases was modulated with pulsed light irradiation. When the light irradiation was turned off, capacitance recovered to its level in the dark, indicating that the photoexited charges were transferred between the Si-QDs and the NiSi-NDs without being emitted to the Si substrate and gate electrode.

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Periodical:

Key Engineering Materials (Volume 470)

Pages:

135-139

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.470.135

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Online since:

February 2011

Authors:

Naoya Morisawa, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki

Keywords:

Hybrid Floating Gate, Internal Photoemission, Nickel Silicide Nanodot, Optical Response, Silicon Quantum Dot

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