Strained Ge and Ge1-xSnx Technology for Future CMOS Devices

Osamu Nakatsuka; Shotaro Takeuchi; Yosuke Shimura; Akira Sakai; Shigeaki Zaima

doi:10.4028/www.scientific.net/KEM.470.146

Paper Titles

Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation
p.123

Development of New Methods for Fine-Wiring in Si Using a Wet Catalytic Reaction
p.129

Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures
p.135

Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application
p.140

Strained Ge and Ge_1-xSn_x Technology for Future CMOS Devices
p.146

Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100)
p.152

Structural Change during the Formation of Directly Bonded Silicon Substrates
p.158

Microscopic Structure of Directly Bonded Silicon Substrates
p.164

Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains
p.171

HomeKey Engineering MaterialsKey Engineering Materials Vol. 470Strained Ge and Ge1-xSnx Technology for Future...

Strained Ge and Ge_1-xSn_x Technology for Future CMOS Devices

Abstract:

We have investigated the growth and crystalline structures of Ge1-xSnx buffer and tensile-strained Ge layers for future use in CMOS technology. We have demonstrated that strain relaxed Ge1-xSnx layers with an Sn content of 12.3% and 9.2% can be grown on Ge and Si substrates, respectively. We achieved a tensile-strain value of 0.71 % in Ge layers on a Ge0.932Sn0.068 buffer layer. We have also investigated the effects of Sn incorporation into Ge on the electrical properties of Ge1-xSnx heteroepitaxial layers.

You might also be interested in these eBooks

Technology Evolution for Silicon Nano-Electronics

View Preview

Info:

Periodical:

Key Engineering Materials (Volume 470)

Pages:

146-151

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.470.146

Citation:

Cite this paper

Online since:

February 2011

Authors:

Osamu Nakatsuka, Shotaro Takeuchi, Yosuke Shimura, Akira Sakai, Shigeaki Zaima

Keywords:

Carrier Mobility, Germanium, Heteroepitaxial Growth, Strain, TiN

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] C. M. Ransom, T. N. Jackson, and J. F. DeGelormo: IEEE Electron Dev. Vol. 38 (1991), p.2695.

Google Scholar

[2] M. T. Currie, C. W. Leitz, T. A. Langdo, G. Traschi, and E. A. Fitzgerald: J. Vac. Sci. Technol. B Vol. 19 (2001), p.2268.

Google Scholar

[3] Z. Xia, G. Du, X. Liu, J. Kang and R. Han: Solid-State Electrons Vol. 49 (2005), p. (1942).

Google Scholar

[4] R. Loo, G. Wang, L. Souriau, J. C. Lin, S. Takeuchi, G. Brammertz, and M. Caymax: J. Electrochem. Soc. Vol. 157 (2010), p. H13.

DOI: 10.1149/1.3244564

Google Scholar

[5] B. Vincent, Y. Shimura, S. Takeuchi, T. Nishimura, G. Eneman, A. Firrincieli, J. Demeulester, A. Vantomme, T. Clarysse, O. Nakatsuka, S. Zaima, J. Dekoster, M. Caymax, R. Loo: submitted to Microelectron. Eng.

DOI: 10.1016/j.mee.2010.10.025

Google Scholar

[6] M. V. Fischetti and S. E. Laux: J. Appl. Phys. Vol. 80 (1996), p.2234.

Google Scholar

[7] A. Sakai, N. Taoka, O. Nakatsuka, S. Zaima, Yukio Yasuda: Appl. Phys. Lett. Vol. 86 (2005) p.221916.

DOI: 10.1063/1.1943493

Google Scholar

[8] S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, and S. Zaima: Semicond. Sci. Tech. Vol. 22 (2007), p. S231.

Google Scholar

[9] Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima: Thin Solid Films Vol. 518 (2010), p. S2.

DOI: 10.1016/j.tsf.2009.10.044

Google Scholar

[10] A. Chroneos: Phys. Stat. Sol. (b) Vol. 244 (2007), p.3206.

Google Scholar

[11] Y. Shimrua, S. Takeuchi, O. Nakatsuka, A. Sakai, and S. Zaima: Submitted to Solid State Electronics.

Google Scholar

[12] O. Madelung: Semiconductors: Data Handbook (Springer, Verlag Belrin Heidelberg New York, 2004) 3rd ed.

Google Scholar

[13] O. Nakatsuka, N. Tsutsui, Y. Shimura, S. Takeuchi, A. Sakai, and S. Zaima: Jpn. J. Appl. Phys. Vol. 49 (2010), p. 04DA10.

DOI: 10.1143/jjap.49.04da10

Google Scholar

[14] O. A. Golikova, B. Y. Moizhez, and L.S. Stilbans: Sov. Phys. Solid State Vol. 3 (1962), p.2259.

Google Scholar