Microscopic Structure of Directly Bonded Silicon Substrates

Tetsuji Kato; Yuji Ohara; Takaya Ueda; Jun Kikkawa; Yoshiaki Nakamura; Akira Sakai; Osamu Nakatsuka; Masaki Ogawa; Shigeaki Zaima; Eiji Toyoda; Hiromichi Isogai; Takeshi Senda; Kouji Izunome; Hiroo Tajiri; Osamu Sakata; Shigeru Kimura

doi:10.4028/www.scientific.net/KEM.470.164

Paper Titles

Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application
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Strained Ge and Ge_1-xSn_x Technology for Future CMOS Devices
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Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100)
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Structural Change during the Formation of Directly Bonded Silicon Substrates
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Microscopic Structure of Directly Bonded Silicon Substrates
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Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains
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Si Nanodot Device Fabricated by Thermal Oxidation and their Applications
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Influences of Carrier Transport on Drain-Current Variability of MOSFETs
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Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 470Microscopic Structure of Directly Bonded Silicon...

Microscopic Structure of Directly Bonded Silicon Substrates

Abstract:

Using X-ray microdiffraction (XRMD) and transmission electron microscopy (TEM) techniques, we have investigated the microscopic structure of Si(011)/Si(001) direct silicon bonding (DSB) substrates. XRMD was performed to measure the local lattice spacing and tilting in the samples before and after oxide out-diffusion annealing. Diffraction analyses for (022) lattice planes with two orthogonal in-plane directions of X-ray incidence revealed anisotropic domain textures in the Si(011) layer. Such anisotropy was also confirmed by TEM in the morphology at the Si(011)/Si(001) bonded interface. The anisotropic crystallinity is discussed on the basis of interfacial defect structures which are proper to the DSB substrate.

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Periodical:

Key Engineering Materials (Volume 470)

Pages:

164-170

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.470.164

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Online since:

February 2011

Authors:

Tetsuji Kato, Yuji Ohara, Takaya Ueda, Jun Kikkawa, Yoshiaki Nakamura, Akira Sakai, Osamu Nakatsuka, Masaki Ogawa, Shigeaki Zaima, Eiji Toyoda, Hiromichi Isogai, Takeshi Senda, Kouji Izunome, Hiroo Tajiri, Osamu Sakata, Shigeru Kimura

Keywords:

Direct Silicon Bonding, Dislocation, TEM, X-Ray Microdiffraction

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