Microscopic Structure of Directly Bonded Silicon Substrates

Abstract:

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Using X-ray microdiffraction (XRMD) and transmission electron microscopy (TEM) techniques, we have investigated the microscopic structure of Si(011)/Si(001) direct silicon bonding (DSB) substrates. XRMD was performed to measure the local lattice spacing and tilting in the samples before and after oxide out-diffusion annealing. Diffraction analyses for (022) lattice planes with two orthogonal in-plane directions of X-ray incidence revealed anisotropic domain textures in the Si(011) layer. Such anisotropy was also confirmed by TEM in the morphology at the Si(011)/Si(001) bonded interface. The anisotropic crystallinity is discussed on the basis of interfacial defect structures which are proper to the DSB substrate.

Info:

Periodical:

Edited by:

Seiichi Miyazaki and Hitoshi Tabata

Pages:

164-170

DOI:

10.4028/www.scientific.net/KEM.470.164

Citation:

T. Kato et al., "Microscopic Structure of Directly Bonded Silicon Substrates", Key Engineering Materials, Vol. 470, pp. 164-170, 2011

Online since:

February 2011

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$35.00

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