Influences of Carrier Transport on Drain-Current Variability of MOSFETs
We have investigated the static variability of p-MOSFETs by evaluating the drain current under various conditions of gate and drain voltages. The value of drain current variability (σId/Id) is proportional to (LW)-1/2 before the short channel effect appears, being similar to that of Vt variability. The magnitude of σId/Id decreases as the gate overdrive (Vg-Vt) decreases, and it is classified into two regimes that correspond to the carrier conduction mechanisms, namely diffusion and drift transports. This result strongly suggests that the dominant factors for determining σId/Id values are related to the carrier conduction mechanisms.
Seiichi Miyazaki and Hitoshi Tabata
K. Ohmori et al., "Influences of Carrier Transport on Drain-Current Variability of MOSFETs", Key Engineering Materials, Vol. 470, pp. 184-187, 2011