Influences of Carrier Transport on Drain-Current Variability of MOSFETs

Kenji Ohmori; Kenji Shiraishi; Keisaku Yamada

doi:10.4028/www.scientific.net/KEM.470.184

Paper Titles

Structural Change during the Formation of Directly Bonded Silicon Substrates
p.158

Microscopic Structure of Directly Bonded Silicon Substrates
p.164

Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains
p.171

Si Nanodot Device Fabricated by Thermal Oxidation and their Applications
p.175

Influences of Carrier Transport on Drain-Current Variability of MOSFETs
p.184

Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers
p.188

Analysis of Threshold Voltage Variations in Fin Field Effect Transistors
p.194

Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs
p.201

Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction
p.207

HomeKey Engineering MaterialsKey Engineering Materials Vol. 470Influences of Carrier Transport on Drain-Current...

Influences of Carrier Transport on Drain-Current Variability of MOSFETs

Abstract:

We have investigated the static variability of p-MOSFETs by evaluating the drain current under various conditions of gate and drain voltages. The value of drain current variability (σId/Id) is proportional to (LW)-1/2 before the short channel effect appears, being similar to that of Vt variability. The magnitude of σId/Id decreases as the gate overdrive (Vg-Vt) decreases, and it is classified into two regimes that correspond to the carrier conduction mechanisms, namely diffusion and drift transports. This result strongly suggests that the dominant factors for determining σId/Id values are related to the carrier conduction mechanisms.

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Periodical:

Key Engineering Materials (Volume 470)

Pages:

184-187

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.470.184

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Online since:

February 2011

Authors:

Kenji Ohmori, Kenji Shiraishi, Keisaku Yamada

Keywords:

Carrier Transport, MOSFET, Variability

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