Influences of Carrier Transport on Drain-Current Variability of MOSFETs

Abstract:

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We have investigated the static variability of p-MOSFETs by evaluating the drain current under various conditions of gate and drain voltages. The value of drain current variability (σId/Id) is proportional to (LW)-1/2 before the short channel effect appears, being similar to that of Vt variability. The magnitude of σId/Id decreases as the gate overdrive (Vg-Vt) decreases, and it is classified into two regimes that correspond to the carrier conduction mechanisms, namely diffusion and drift transports. This result strongly suggests that the dominant factors for determining σId/Id values are related to the carrier conduction mechanisms.

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Periodical:

Edited by:

Seiichi Miyazaki and Hitoshi Tabata

Pages:

184-187

DOI:

10.4028/www.scientific.net/KEM.470.184

Citation:

K. Ohmori et al., "Influences of Carrier Transport on Drain-Current Variability of MOSFETs", Key Engineering Materials, Vol. 470, pp. 184-187, 2011

Online since:

February 2011

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$35.00

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