Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs

Abstract:

Transient phenomena related to carrier capture/emission processes in interface traps were observed in the the charge pumping (CP) characteristics of SiGe/Si hetero-channel pMOSFETs, i.e., the CP characteristics were found to depend on the on/off time of the gate pulse. From these observations, time constants for the processes both in SiGe/Si heterointerface traps and in gate-oxide interface traps were derived. The time constant is considered to depend on the energy level of the interface traps that are present over a wide range within the energy gap. Therefore, these phenomena provide an interesting way of evaluating the discrete energy levels of interface traps in nanometer-scale devices containing only a few traps.

• Periodical: Key Engineering Materials (Volume 470)
• Pages: 201-206
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.470.201
• Online since: February 2011
• Authors: Toshiaki Tsuchiya, Keiichi Yoshida, Masao Sakuraba, Junichi Murota
• Keywords: Carrier Capture Process, Charge Pumping, Heterointerface Trap, MOSFET

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