Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors

Abstract:

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Quantum-transport simulations of current-voltage characteristics are performed in ultra-small double-gate and gate-all-around metal-oxide-semiconductor field-effect-transistors (MOSFETs) with a single attractive ion in the channel region. The ion induces a threshold voltage shift, whose origin is attributed to an ion-induced barrier lowering (IIBL). An analytical expression for the IIBL in ultra-small MOSFETs is derived. The analytical expression for the IIBL consists of two terms: a term related to the potential curvature at the potential top and a correction term due to the screening effects. The analytical model reproduces reasonably well the stimulated IIBL in the subthreshold region.

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Periodical:

Edited by:

Seiichi Miyazaki and Hitoshi Tabata

Pages:

218-223

DOI:

10.4028/www.scientific.net/KEM.470.218

Citation:

N. Mori et al., "Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors", Key Engineering Materials, Vol. 470, pp. 218-223, 2011

Online since:

February 2011

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$35.00

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