Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction

Abstract:

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The singular nature of the Boltzmann transport equation leads to the boundary layer structure around the virtual source in nano-scale device structures. We show that the boundary layer is a key concept to understand the physical mechanism behind quasi-ballistic transport in nano-scale devices. The self-consistent 3D Monte Carlo device simulator is constructed by accurately including the full Coulomb interaction. It is explicitly shown that the Coulomb interaction is indeed a key ingredient for any reliable predictions of device characteristics.

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Periodical:

Edited by:

Seiichi Miyazaki and Hitoshi Tabata

Pages:

207-213

DOI:

10.4028/www.scientific.net/KEM.470.207

Citation:

N. Sano and T. Karasawa, "Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction", Key Engineering Materials, Vol. 470, pp. 207-213, 2011

Online since:

February 2011

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$35.00

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