Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction

Abstract:

The singular nature of the Boltzmann transport equation leads to the boundary layer structure around the virtual source in nano-scale device structures. We show that the boundary layer is a key concept to understand the physical mechanism behind quasi-ballistic transport in nano-scale devices. The self-consistent 3D Monte Carlo device simulator is constructed by accurately including the full Coulomb interaction. It is explicitly shown that the Coulomb interaction is indeed a key ingredient for any reliable predictions of device characteristics.

• Periodical: Key Engineering Materials (Volume 470)
• Pages: 207-213
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.470.207
• Online since: February 2011
• Authors: Nobuyuki Sano, Takahiko Karasawa
• Keywords: Ballistic Transport, Electron Device, Electron Transport, Monte-Carlo, MOSFET, Nanodevice

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