Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction
The singular nature of the Boltzmann transport equation leads to the boundary layer structure around the virtual source in nano-scale device structures. We show that the boundary layer is a key concept to understand the physical mechanism behind quasi-ballistic transport in nano-scale devices. The self-consistent 3D Monte Carlo device simulator is constructed by accurately including the full Coulomb interaction. It is explicitly shown that the Coulomb interaction is indeed a key ingredient for any reliable predictions of device characteristics.
Seiichi Miyazaki and Hitoshi Tabata
N. Sano and T. Karasawa, "Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction", Key Engineering Materials, Vol. 470, pp. 207-213, 2011