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HomeKey Engineering MaterialsKey Engineering Materials Vol. 470Si Nanodot Device Fabricated by Thermal Oxidation...

Si Nanodot Device Fabricated by Thermal Oxidation and their Applications

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Abstract:

Small single-electron devices (SEDs) consisting of many Si nanodots are fabricated on a silicon-on-insulator (SOI) wafer by means of pattern-dependent oxidation (PADOX) method. We investigated SEDs from two kinds of viewpoint. One is how to fabricate the nanodots, especially coupled nanodots, which are important to achieve quantum computers and single-electron transfer devices. The other is demonstration of new applications that tolerate the size fluctuation. In order to achieve multi-coupled nanodots, we developed an easy method by applying PADOX to a specially designed Si nanowire which has small constrictions at the ends of the wire. We confirmed the double-dot formation and position of the Si nanodots in the wire by analyzing the measured electrical characteristics. To achieve high functionality together with low-power consumption and tolerance to size fluctuation, we developed nanodot array device which has many input gates and outputs terminals. The fabricated three-input and two-output nanodot device actually provide high functionality such as a half adder and a full adder.

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Periodical:

Key Engineering Materials (Volume 470)

Pages:

175-183

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.470.175

Citation:

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Online since:

February 2011

Authors:

Yasuo Takahashi, Ming Yu Jo, Takuya Kaizawa, Yuki Kato, Masashi Arita, Akira Fujiwara, Yukinori Ono, Hiroshi Inokawa, Jung Bum Choi

Keywords:

Adder, Coulomb Blockade, Coupled Dot, Double Dot, Full Adder, Half Adder, Nanodot, Selectable Logic Device, Single Electron, SOI

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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