Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains

Hideo Kohno; Takafumi Nogami

doi:10.4028/www.scientific.net/KEM.470.171

Paper Titles

Strained Ge and Ge_1-xSn_x Technology for Future CMOS Devices
p.146

Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100)
p.152

Structural Change during the Formation of Directly Bonded Silicon Substrates
p.158

Microscopic Structure of Directly Bonded Silicon Substrates
p.164

Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains
p.171

Si Nanodot Device Fabricated by Thermal Oxidation and their Applications
p.175

Influences of Carrier Transport on Drain-Current Variability of MOSFETs
p.184

Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers
p.188

Analysis of Threshold Voltage Variations in Fin Field Effect Transistors
p.194

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Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains

Abstract:

We report a new route to fabricating carbon nanotubes and nanotube interconnects. Insulating Si nanochains covered with hydrocarbon, which are a kind of Si nanowire, can be transformed into distorted nanotubes of carbon by Joule heating. Transmission electron microscopy observations of the transformation reveal that first a surface carbon shell is formed, and then oxide evaporates by Joule heating forming a nanotube.