Structural Change during the Formation of Directly Bonded Silicon Substrates

Tetsuji Kato; Takaya Ueda; Yuji Ohara; Jun Kikkawa; Yoshiaki Nakamura; Akira Sakai; Osamu Nakatsuka; Shigeaki Zaima; Eiji Toyoda; Kouji Izunome; Yasuhiko Imai; Shigeru Kimura; Osamu Sakata

doi:10.4028/www.scientific.net/KEM.470.158

Paper Titles

Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures
p.135

Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application
p.140

Strained Ge and Ge_1-xSn_x Technology for Future CMOS Devices
p.146

Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100)
p.152

Structural Change during the Formation of Directly Bonded Silicon Substrates
p.158

Microscopic Structure of Directly Bonded Silicon Substrates
p.164

Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains
p.171

Si Nanodot Device Fabricated by Thermal Oxidation and their Applications
p.175

Influences of Carrier Transport on Drain-Current Variability of MOSFETs
p.184

HomeKey Engineering MaterialsKey Engineering Materials Vol. 470Structural Change during the Formation of Directly...

Structural Change during the Formation of Directly Bonded Silicon Substrates

Abstract:

The use of Si(011)/Si(001) direct silicon bonding (DSB) substrates is a key element of future complementary metal-oxide-semiconductor device technology. In the conventional bonding process, it is necessary to remove interfacial SiO2 to achieve direct atomic bonding. In this study, using X-ray microdiffraction and transmission electron microscopy, we investigate the structural changes caused by oxide out-diffusion annealing (ODA). It is revealed that crystallinity of the bonded Si(011) layer is degraded after low temperature ODA and gradually recovered with an increase in the ODA temperature and annealing time, which is well correlated with the interfacial SiO₂/Si morphology. Characteristic domain textures depending on the ODA temperature are also detected.

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Periodical:

Key Engineering Materials (Volume 470)

Pages:

158-163

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.470.158

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Online since:

February 2011

Authors:

Tetsuji Kato, Takaya Ueda, Yuji Ohara, Jun Kikkawa, Yoshiaki Nakamura, Akira Sakai, Osamu Nakatsuka, Shigeaki Zaima, Eiji Toyoda, Kouji Izunome, Yasuhiko Imai, Shigeru Kimura, Osamu Sakata

Keywords:

Direct Silicon Bonding, Oxide Out Diffusion Annealing, TEM, X-Ray Microdiffraction

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