Structural Change during the Formation of Directly Bonded Silicon Substrates

Abstract:

Article Preview

The use of Si(011)/Si(001) direct silicon bonding (DSB) substrates is a key element of future complementary metal-oxide-semiconductor device technology. In the conventional bonding process, it is necessary to remove interfacial SiO2 to achieve direct atomic bonding. In this study, using X-ray microdiffraction and transmission electron microscopy, we investigate the structural changes caused by oxide out-diffusion annealing (ODA). It is revealed that crystallinity of the bonded Si(011) layer is degraded after low temperature ODA and gradually recovered with an increase in the ODA temperature and annealing time, which is well correlated with the interfacial SiO2/Si morphology. Characteristic domain textures depending on the ODA temperature are also detected.

Info:

Periodical:

Edited by:

Seiichi Miyazaki and Hitoshi Tabata

Pages:

158-163

DOI:

10.4028/www.scientific.net/KEM.470.158

Citation:

T. Kato et al., "Structural Change during the Formation of Directly Bonded Silicon Substrates", Key Engineering Materials, Vol. 470, pp. 158-163, 2011

Online since:

February 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.