Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application

Yan Li Pei; Tatsuro Hiraki; Toshiya Kojima; Takafumi Fukushima; Mitsumasa Koyanagi; Tetsu Tanaka

doi:10.4028/www.scientific.net/KEM.470.140

Paper Titles

Nano-Surface Modification of Silicon with Ultra-Short Pulse Laser Process
p.117

Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation
p.123

Development of New Methods for Fine-Wiring in Si Using a Wet Catalytic Reaction
p.129

Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures
p.135

Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application
p.140

Strained Ge and Ge_1-xSn_x Technology for Future CMOS Devices
p.146

Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100)
p.152

Structural Change during the Formation of Directly Bonded Silicon Substrates
p.158

Microscopic Structure of Directly Bonded Silicon Substrates
p.164

HomeKey Engineering MaterialsKey Engineering Materials Vol. 470Energy Band Engineering of Metal Nanodots for High...

Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application

Abstract:

In this work, high density and small size metal nanodots (MND) with different work-functions were fabricated as a floating gate of nonvolatile memory (NVM) devices by self-assembled nanodot deposition (SAND). The energy band engineering of NVM was demonstrated through controlling MND work-function. For single MND layer floating gate NVM, the retention time was improved by choosing high work-function MND. Furthermore, we proposed a new type NVM with a double stacked MND floating gate. Here, the high work-function MND are placed on the top layer and the low work-function MND are placed on the bottom layer. A large memory window and long retention time were obtained. However, the thermal electron excitation is dominant for the electron discharge process during retention. How to reduce the defects in MND layer is important for further improving of memory characteristics.

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Periodical:

Key Engineering Materials (Volume 470)

Pages:

140-145

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.470.140

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Online since:

February 2011

Authors:

Yan Li Pei, Tatsuro Hiraki, Toshiya Kojima, Takafumi Fukushima, Mitsumasa Koyanagi, Tetsu Tanaka

Keywords:

Energy Band Engineering, Metal Nanodots, Non-Volatile Memory (NVM), Retention

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