Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation

Masao Sakuraba; Katsutoshi Sugawara; Junichi Murota

doi:10.4028/www.scientific.net/KEM.470.98

Paper Titles

Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors
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Effect of Al₂O₃ Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator
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Controlled Synthesis of Carbon Nanowalls for Carbon Channel Engineering
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Resistive Memory Utilizing Ferritin Protein with Nano Particle
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Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation
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Nanometer-Scale Characterization Technique for Si Nanoelectric Materials Using Synchrotron Radiation Microdiffraction
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Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface
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Nano-Surface Modification of Silicon with Ultra-Short Pulse Laser Process
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Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 470Atomically Controlled Plasma Processing for Group...

Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation

Abstract:

By low-temperature epitaxial growth of group IV semiconductors utilizing electron-cyclotron-resonance (ECR) plasma enhanced chemical vapor deposition (CVD), atomically controlled plasma processing has been developed in order to achieve atomic-layer doping and heterostructure formation with nanometer-order thickness control as well as smooth and abrupt interfaces. In this paper, typical recent progress in plasma processing is reviewed as follows: (1) By N and B atomic-layer formation and subsequent Si epitaxial growth on Si(100) without substrate heating, heavy atomic-layer doping was demonstrated. Most of the incorporated N or B atoms can be confined in about a 2-nm-thick region of the atomic-layer doped Si film. (2) Using an 84 % relaxed Ge buffer layer formed on Si(100) by ECR plasma enhanced CVD, formation of a B-doped highly strained Si film with nanometer-order thickness was achieved and hole mobility enhancement as high as about 3 was observed in the highly strained Si film.

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Periodical:

Key Engineering Materials (Volume 470)

Pages:

98-103

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.470.98

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Online since:

February 2011

Authors:

Masao Sakuraba, Katsutoshi Sugawara, Junichi Murota

Keywords:

Atomic Layer Doping, B, Epitaxial Growth, Ge, Group IV Semiconductor, N, Plasma Enhanced Chemical Vapor Deposition (PECVD), Quantum Heterostructure, Si, Strain

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