Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation

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By low-temperature epitaxial growth of group IV semiconductors utilizing electron-cyclotron-resonance (ECR) plasma enhanced chemical vapor deposition (CVD), atomically controlled plasma processing has been developed in order to achieve atomic-layer doping and heterostructure formation with nanometer-order thickness control as well as smooth and abrupt interfaces. In this paper, typical recent progress in plasma processing is reviewed as follows: (1) By N and B atomic-layer formation and subsequent Si epitaxial growth on Si(100) without substrate heating, heavy atomic-layer doping was demonstrated. Most of the incorporated N or B atoms can be confined in about a 2-nm-thick region of the atomic-layer doped Si film. (2) Using an 84 % relaxed Ge buffer layer formed on Si(100) by ECR plasma enhanced CVD, formation of a B-doped highly strained Si film with nanometer-order thickness was achieved and hole mobility enhancement as high as about 3 was observed in the highly strained Si film.

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Periodical:

Edited by:

Seiichi Miyazaki and Hitoshi Tabata

Pages:

98-103

DOI:

10.4028/www.scientific.net/KEM.470.98

Citation:

M. Sakuraba et al., "Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation", Key Engineering Materials, Vol. 470, pp. 98-103, 2011

Online since:

February 2011

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$35.00

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