Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors

Abstract:

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We have studied new abrupt-source-relaxed/strained semiconductor-heterojunction structures for quasi-ballistic complementary-metal-oxide-semiconductor (CMOS) devices, by locally controlling the strain of a single strained semiconductor. Appling O+ ion implantation recoil energy to the strained semiconductor/buried oxide interface, Raman analysis of the strained layers indicates that we have successfully relaxed both strained-Si-on-insulator (SSOI) substrates for n-MOS and SiGe-on-insulator (SGOI) substrates for p-MOS without poly crystallizing the semiconductor layers, by optimizing O+ ion implantation conditions. As a result, it is considered that the source conduction and valence band offsets EC and EV can be realized by the energy difference in the source Si/channel-strained Si and the source-relaxed SiGe/channel-strained SiGe layers, respectively. The device simulator, considering the tunneling effects at the source heterojunction, shows that the transconductance of sub-10 nm source heterojunction MOS transistors (SHOT) continues to increase with increasing EC. Therefore, SHOT structures with the novel source heterojunction are very promising for future quasi-ballistic CMOS devices.

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Periodical:

Edited by:

Seiichi Miyazaki and Hitoshi Tabata

Pages:

72-78

DOI:

10.4028/www.scientific.net/KEM.470.72

Citation:

T. Mizuno et al., "Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors", Key Engineering Materials, Vol. 470, pp. 72-78, 2011

Online since:

February 2011

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$35.00

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