Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator

Abstract:

Article Preview

Al2O3 deposition and subsequent post-deposition annealing (Al2O3-PDA) is proposed as an effective method to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates. We found that Al2O3-PDA could not only suppress the surface reaction during Al-PDA, but could also effectively reduce the defect-induced acceptor and hole concentration in Ge-rich SGOI. Al2O3-PDA greatly improves the electrical characteristics of a back-gate metal-oxide-semiconductor field-effect transistor fabricated on Ge-rich SGOI.

Info:

Periodical:

Edited by:

Seiichi Miyazaki and Hitoshi Tabata

Pages:

79-84

DOI:

10.4028/www.scientific.net/KEM.470.79

Citation:

H. G. Yang et al., "Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator", Key Engineering Materials, Vol. 470, pp. 79-84, 2011

Online since:

February 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.