Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator

Hai Gui Yang; Masatoshi Iyota; Shogo Ikeura; Dong Wang; Hiroshi Nakashima

doi:10.4028/www.scientific.net/KEM.470.79

Paper Titles

Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions
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First-Principles Calculations of the Dielectric Constant for the GeO₂ Films
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Nanosize Electronics Material Analysis by Local Quantities Based on the Rigged QED Theory
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Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors
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Effect of Al₂O₃ Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator
p.79

Controlled Synthesis of Carbon Nanowalls for Carbon Channel Engineering
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Resistive Memory Utilizing Ferritin Protein with Nano Particle
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Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation
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Nanometer-Scale Characterization Technique for Si Nanoelectric Materials Using Synchrotron Radiation Microdiffraction
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 470Effect of Al2O3 Deposition and Subsequent...

Effect of Al₂O₃ Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator

Abstract:

Al2O3 deposition and subsequent post-deposition annealing (Al2O3-PDA) is proposed as an effective method to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates. We found that Al2O3-PDA could not only suppress the surface reaction during Al-PDA, but could also effectively reduce the defect-induced acceptor and hole concentration in Ge-rich SGOI. Al2O3-PDA greatly improves the electrical characteristics of a back-gate metal-oxide-semiconductor field-effect transistor fabricated on Ge-rich SGOI.

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Periodical:

Key Engineering Materials (Volume 470)

Pages:

79-84

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.470.79

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Online since:

February 2011

Authors:

Hai Gui Yang, Masatoshi Iyota, Shogo Ikeura, Dong Wang, Hiroshi Nakashima

Keywords:

Al₂O₃ PDA, Al-PDA, Defect Passivation, Ge Condensation, SiGe-on-Insulator

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